Invention Grant
- Patent Title: MRAM element with low writing temperature
- Patent Title (中): 写入温度低的MRAM元件
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Application No.: US14762264Application Date: 2014-01-16
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Publication No.: US09336846B2Publication Date: 2016-05-10
- Inventor: Ioan Lucian Prejbeanu , Jerome Moritz , Bernard Dieny
- Applicant: CROCUS Technology SA
- Applicant Address: FR Grenoble
- Assignee: CROCUS TECHNOLOGY SA
- Current Assignee: CROCUS TECHNOLOGY SA
- Current Assignee Address: FR Grenoble
- Agency: Pearne & Gordon LLP
- Priority: EP13290019 20130123
- International Application: PCT/EP2014/050772 WO 20140116
- International Announcement: WO2014/114550 WO 20140731
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/02 ; H01L43/08 ; H01L43/10
Abstract:
MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
Public/Granted literature
- US20150357014A1 MRAM ELEMENT WITH LOW WRITING TEMPERATURE Public/Granted day:2015-12-10
Information query
