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1.发明授权公开(公告)号：US09331268B2
公开(公告)日：2016-05-03
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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公开(公告)号：US20150357014A1
公开(公告)日：2015-12-10
申请号：US14762264
申请日：2014-01-16
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Jerome Moritz , Bernard Dieny
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
Abstract translation: MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。
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公开(公告)号：US09336846B2
公开(公告)日：2016-05-10
申请号：US14762264
申请日：2014-01-16
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Jerome Moritz , Bernard Dieny
CPC classification number: G11C11/161 , G11C11/16 , G11C11/1675 , G11C2211/5615 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: MRAM element having a magnetic tunnel junction including a reference layer, a storage layer, a tunnel barrier layer between the reference and storage layers, and a storage antiferromagnetic layer. The storage antiferromagnetic layer has a first function of exchange-coupling a storage magnetization of the storage layer and a second function of heating the magnetic tunnel junction when a heating current in passed in the magnetic tunnel junction. The MRAM element has better data retention and low writing temperature.
Abstract translation: MRAM元件具有包括参考层的磁性隧道结，存储层，参考层和存储层之间的隧道势垒层，以及存储反铁磁层。 存储反铁磁层具有交换耦合存储层的存储磁化的第一功能和当通过磁性隧道结中的加热电流时加热磁性隧道结的第二功能。 MRAM元件具有更好的数据保留和低写入温度。
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4.发明授权Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权具有线性磁信号的磁逻辑单元（MLU）单元和放大器公开(公告)号：US09324936B2
公开(公告)日：2016-04-26
申请号：US14431140
申请日：2013-09-12
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。
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5.发明申请MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 有权具有线性磁信号的磁性逻辑单元（MLU）单元和放大器公开(公告)号：US20150270479A1
公开(公告)日：2015-09-24
申请号：US14431140
申请日：2013-09-12
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
Abstract: A magnetic logic unit (MLU) cell includes a first and second magnetic tunnel junction, each including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a barrier layer; and a field line for passing a field current such as to generate an external magnetic field adapted to adjust the first magnetization. The first and second magnetic layers and the barrier layer are arranged such that the first magnetization is magnetically coupled antiparallel with the second magnetization through the barrier layer. The MLU cell also includes a biasing device arranged for applying a static biasing magnetic field oriented substantially parallel to the external magnetic field such as to orient the first magnetization at about 90° relative to the second magnetization, the first and second magnetizations being oriented symmetrically relative to the direction of the external magnetic field.
Abstract translation: 磁逻辑单元（MLU）单元包括第一和第二磁性隧道结，每个包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层和阻挡层; 以及用于通过场电流的场线，以产生适于调整第一磁化的外部磁场。 第一和第二磁性层和阻挡层被布置成使得第一磁化与通过阻挡层的第二磁化反平行地磁耦合。 MLU单元还包括偏置装置，其被布置成施加基本上平行于外部磁场定向的静态偏置磁场，以便相对于第二磁化将第一磁化定向成约90°，第一和第二磁化定向对称相对 到外部磁场的方向。
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Patent Agency Ranking
公开(公告)号：US20220196764A1
公开(公告)日：2022-06-23
申请号：US17605069
申请日：2020-04-23
Applicant: Crocus Technology SA
Inventor： Salim Dounia , Claire Baraduc , Bernard Dieny
IPC: G01R33/09
Abstract: Magnetic element including a first ferromagnetic layer having a first magnetization including a stable magnetization vortex configuration having a vortex core. The first ferromagnetic layer includes an indentation configured such that the vortex core nucleates substantially at the indentation. Upon application of an external magnetic field in a first field direction, the vortex core moves along a first path and the first magnetization rotates around the vortex core in a counterclockwise direction. Upon application of the external magnetic field in a second field direction opposed to the first field direction, the vortex core moves along a second path and the first magnetization rotates around the vortex core in a clockwise direction. Both the first and second field path are substantially identical and move the vortex core away from the indentation.
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7.发明申请MAGNETIC LOGIC UNIT (MLU) CELL AND AMPLIFIER HAVING A LINEAR MAGNETIC SIGNAL 有权具有线性磁信号的磁性逻辑单元（MLU）单元和放大器公开(公告)号：US20150228888A1
公开(公告)日：2015-08-13
申请号：US14431125
申请日：2013-09-12
Applicant: CROCUS TECHNOLOGY SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。
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公开(公告)号：US11852700B2
公开(公告)日：2023-12-26
申请号：US17605069
申请日：2020-04-23
Applicant: Crocus Technology SA
Inventor： Salim Dounia , Claire Baraduc , Bernard Dieny
IPC: G01R33/09
CPC classification number: G01R33/098
Abstract: Magnetic element including a first ferromagnetic layer having a first magnetization including a stable magnetization vortex configuration having a vortex core. The first ferromagnetic layer includes an indentation configured such that the vortex core nucleates substantially at the indentation. Upon application of an external magnetic field in a first field direction, the vortex core moves along a first path and the first magnetization rotates around the vortex core in a counterclockwise direction. Upon application of the external magnetic field in a second field direction opposed to the first field direction, the vortex core moves along a second path and the first magnetization rotates around the vortex core in a clockwise direction. Both the first and second field path are substantially identical and move the vortex core away from the indentation.
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9.发明授权Magnetic logic unit (MLU) cell and amplifier having a linear magnetic signal 有权具有线性磁信号的磁逻辑单元（MLU）单元和放大器公开(公告)号：US09583695B2
公开(公告)日：2017-02-28
申请号：US14431125
申请日：2013-09-12
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Kenneth MacKay , Bertrand Cambou
CPC classification number: H01L43/02 , G11C11/16 , G11C11/1675 , H03F15/00 , H03K19/18
Abstract: A magnetic logic unit (MLU) cell includes a first magnetic tunnel junction and a second magnetic tunnel junction, each magnetic tunnel junction including a first magnetic layer having a first magnetization, a second magnetic layer having a second magnetization, and a tunnel barrier layer between the first and second layer. A field line for passing a field current such as to generate an external magnetic field is adapted to switch the first magnetization. The first magnetic layer is arranged such that the magnetic tunnel junction magnetization varies linearly with the generated external magnetic field. An MLU amplifier includes a plurality of the MLU cells. The MLU amplifier has large gains, extended cut off frequencies and improved linearity.
Abstract translation: 磁逻辑单元（MLU）单元包括第一磁性隧道结和第二磁性隧道结，每个磁性隧道结包括具有第一磁化的第一磁性层，具有第二磁化的第二磁性层，和 第一层和第二层。 用于传递场电流（例如产生外部磁场）的场线适于切换第一磁化。 第一磁性层布置成使得磁性隧道结磁化随所产生的外部磁场线性变化。 MLU放大器包括多个MLU单元。 MLU放大器具有很大的增益，延长了截止频率，提高了线性度。
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10.发明申请公开(公告)号：US20150123224A1
公开(公告)日：2015-05-07
申请号：US14405918
申请日：2013-06-07
Applicant: CROCUS Technology SA
Inventor： Ioan Lucian Prejbeanu , Bernard Dieny , Clarisse Ducruet , Lucien Lombard
CPC classification number: H01L43/08 , G11C11/16 , G11C11/161 , G11C11/1675 , H01L43/02
Abstract: A thermally assisted switching MRAM element including a magnetic tunnel junction including a reference layer having a reference magnetization; a storage layer having a storage magnetization; a tunnel barrier layer included between the storage layer and the reference layer; and a storage antiferromagnetic layer exchange-coupling the storage layer such as to pin the storage magnetization at a low temperature threshold and to free it at a high temperature threshold. The antiferromagnetic layer includes: at least one first antiferromagnetic layer having a first storage blocking temperature, and at least one second antiferromagnetic layer having a second storage blocking temperature; wherein the first storage blocking temperature is below 200° C. and the second storage blocking temperature is above 250° C. The MRAM element combines better data retention compared with known MRAM elements with low writing mode operating temperature.
Abstract translation: 一种热辅助切换MRAM元件，包括具有参考磁化的参考层的磁性隧道结; 具有存储磁化的存储层; 包括在所述存储层和所述参考层之间的隧道势垒层; 以及存储反铁磁层，其将存储层交换耦合，以便在低温阈值下固定存储磁化并将其在高温阈值下释放。 反铁磁层包括：具有第一存储阻挡温度的至少一个第一反铁磁层和具有第二存储阻挡温度的至少一个第二反铁磁层; 其中第一存储阻挡温度低于200℃，第二存储阻挡温度高于250℃。与具有低写入模式工作温度的已知MRAM元件相比，MRAM元件结合了更好的数据保留。
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