发明授权
- 专利标题: Memory channel that supports near memory and far memory access
- 专利标题(中): 支持近内存和远程内存访问的内存通道
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申请号: US13977603申请日: 2011-09-30
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公开(公告)号: US09342453B2公开(公告)日: 2016-05-17
- 发明人: Bill Nale , Raj K. Ramanujan , Muthukumar P. Swaminathan , Tessil Thomas , Taarinya Polepeddi
- 申请人: Bill Nale , Raj K. Ramanujan , Muthukumar P. Swaminathan , Tessil Thomas , Taarinya Polepeddi
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely, Sokoloff, Taylor & Zafman LLP
- 国际申请: PCT/US2011/054421 WO 20110930
- 国际公布: WO2013/048493 WO 20130404
- 主分类号: G06F12/00
- IPC分类号: G06F12/00 ; G06F12/08 ; G06F13/16 ; G06F11/10 ; G06F9/46 ; G06F3/00
摘要:
A semiconductor chip comprising memory controller circuitry having interface circuitry to couple to a memory channel. The memory controller includes first logic circuitry to implement a first memory channel protocol on the memory channel. The first memory channel protocol is specific to a first volatile system memory technology. The interface also includes second logic circuitry to implement a second memory channel protocol on the memory channel. The second memory channel protocol is specific to a second non volatile system memory technology. The second memory channel protocol is a transactional protocol.
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