Invention Grant
US09349799B2 Adjusting the charge carrier lifetime in a bipolar semiconductor device
有权
调整双极半导体器件中的电荷载流子寿命
- Patent Title: Adjusting the charge carrier lifetime in a bipolar semiconductor device
- Patent Title (中): 调整双极半导体器件中的电荷载流子寿命
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Application No.: US14825231Application Date: 2015-08-13
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Publication No.: US09349799B2Publication Date: 2016-05-24
- Inventor: Gerhard Schmidt , Josef Georg Bauer , Mario Barusic , Oliver Humbel , Hans Millonig , Werner Schustereder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015112265 20150728
- Main IPC: H01L21/332
- IPC: H01L21/332 ; H01L29/10 ; H01L29/66 ; H01L29/739 ; H01L29/08 ; H01L21/266 ; H01L21/225 ; H01L21/263
Abstract:
Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.
Public/Granted literature
- US20160049474A1 Adjusting the Charge Carrier Lifetime in a Bipolar Semiconductor Device Public/Granted day:2016-02-18
Information query
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