公开(公告)号：US20160111289A1

公开(公告)日：2016-04-21

申请号：US14868969

申请日：2015-09-29

Applicant: Infineon Technologies AG

Inventor： Oliver Humbel ,  Hans Millonig

IPC: H01L21/265 ,  H01L29/36 ,  H01L29/66 ,  H01L29/861

CPC classification number: H01L21/26513 ,  H01L21/265 ,  H01L21/266 ,  H01L29/167 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/6609 ,  H01L29/66128 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/861 ,  H01L29/8611

Abstract: A method includes forming an emitter at the first side of a semiconductor substrate by doping, wherein the dopant concentration is higher in the emitter than in the edge region; growing an oxide layer on the first side by annealing, wherein the oxide layer has a first thickness in a first region covering the emitter, and a second thickness in a second region covering the edge region. The first thickness is larger than the second thickness. Heavy metal ions are implanted through the first side with a first energy, and with a second energy, wherein the first energy and the second energy are different, such that the implanted heavy metal concentration in the edge region is higher than in the emitter due to an absorption of the oxide layer covering the emitter, resulting in a lower charge carrier lifetime in the edge region than in the emitter.

Abstract translation: 一种方法包括通过掺杂在半导体衬底的第一侧形成发射极，其中发射极中的掺杂剂浓度高于边缘区域; 通过退火在第一侧生长氧化物层，其中氧化物层在覆盖发射极的第一区域中具有第一厚度，在覆盖边缘区域的第二区域中具有第二厚度。 第一厚度大于第二厚度。 重金属离子通过第一侧以第一能量注入，并且具有第二能量，其中第一能量和第二能量不同，使得在边缘区域中注入的重金属浓度高于发射极中的重金属离子，因为 覆盖发射极的氧化物层的吸收，导致边缘区域中的电荷载流子寿命比在发射极中更低。

公开(公告)号：US09349799B2

公开(公告)日：2016-05-24

申请号：US14825231

申请日：2015-08-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer ,  Mario Barusic ,  Oliver Humbel ,  Hans Millonig ,  Werner Schustereder

IPC: H01L21/332 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739 ,  H01L29/08 ,  H01L21/266 ,  H01L21/225 ,  H01L21/263

CPC classification number: H01L29/1095 ,  H01L21/225 ,  H01L21/2636 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/3221 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66272 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/732 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/8611

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 公开了一种方法和半导体器件。 该方法包括通过第一表面将复合中心原子注入到半导体本体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。

公开(公告)号：US09418850B2

公开(公告)日：2016-08-16

申请号：US14868969

申请日：2015-09-29

Applicant: Infineon Technologies AG

Inventor： Oliver Humbel ,  Hans Millonig

IPC: H01L29/36 ,  H01L21/265 ,  H01L29/861 ,  H01L29/66

CPC classification number: H01L21/26513 ,  H01L21/265 ,  H01L21/266 ,  H01L29/167 ,  H01L29/36 ,  H01L29/402 ,  H01L29/404 ,  H01L29/6609 ,  H01L29/66128 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/861 ,  H01L29/8611

Abstract: A method includes forming an emitter at the first side of a semiconductor substrate by doping, wherein the dopant concentration is higher in the emitter than in the edge region; growing an oxide layer on the first side by annealing, wherein the oxide layer has a first thickness in a first region covering the emitter, and a second thickness in a second region covering the edge region. The first thickness is larger than the second thickness. Heavy metal ions are implanted through the first side with a first energy, and with a second energy, wherein the first energy and the second energy are different, such that the implanted heavy metal concentration in the edge region is higher than in the emitter due to an absorption of the oxide layer covering the emitter, resulting in a lower charge carrier lifetime in the edge region than in the emitter.

Abstract translation: 一种方法包括通过掺杂在半导体衬底的第一侧形成发射极，其中发射极中的掺杂剂浓度高于边缘区域; 通过退火在第一侧生长氧化物层，其中氧化物层在覆盖发射极的第一区域中具有第一厚度，在覆盖边缘区域的第二区域中具有第二厚度。 第一厚度大于第二厚度。 重金属离子通过第一侧以第一能量注入，并且具有第二能量，其中第一能量和第二能量不同，使得在边缘区域中注入的重金属浓度高于发射极中的重金属离子，因为 覆盖发射极的氧化物层的吸收，导致边缘区域中的电荷载流子寿命比在发射极中更低。

公开(公告)号：US20160049474A1

公开(公告)日：2016-02-18

申请号：US14825231

申请日：2015-08-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer ,  Mario Barusic ,  Oliver Humbel ,  Hans Millonig ,  Werner Schustereder

IPC: H01L29/10 ,  H01L29/739 ,  H01L21/263 ,  H01L21/266 ,  H01L21/225 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L21/225 ,  H01L21/2636 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/3221 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66272 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/732 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/8611

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 公开了一种方法和半导体器件。 该方法包括通过第一表面将复合中心原子注入到半导体本体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。