公开(公告)号：US20150200247A1

公开(公告)日：2015-07-16

申请号：US14153377

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer

IPC: H01L29/06 ,  H01L29/66 ,  H01L21/324 ,  H01L29/739 ,  H01L21/266 ,  H01L27/07 ,  H01L29/10

CPC classification number: H01L21/324 ,  H01L21/26513 ,  H01L27/0727 ,  H01L27/0761 ,  H01L29/0834 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861

Abstract: A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors. At least 90% of the electrically active chalcogen impurities form isolated defects in the semiconductor material.

Abstract translation: 功率半导体器件具有半导体本体，其具有基本上平行于第一表面延伸的第一表面和第二表面。 第一金属化被布置在第一表面上。 第二金属化被布置在第二表面上。 半导体本体包括与第一金属化间隔开并具有第一最大掺杂浓度的n掺杂的第一半导体区域，具有高于第一最大掺杂浓度的第二最大掺杂浓度的n掺杂的第二半导体区域并邻接第一半导体 以及与所述第二金属化欧姆接触的第三半导体区域，被布置在所述第二金属化层和所述第二半导体区域之间并邻接所述第二半导体区域。 第二半导体区域由包含作为供体的电活性硫属元素杂质的半导体材料制成。 至少90％的电活性硫族元素杂质在半导体材料中形成孤立的缺陷。

公开(公告)号：US20160049474A1

公开(公告)日：2016-02-18

申请号：US14825231

申请日：2015-08-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer ,  Mario Barusic ,  Oliver Humbel ,  Hans Millonig ,  Werner Schustereder

IPC: H01L29/10 ,  H01L29/739 ,  H01L21/263 ,  H01L21/266 ,  H01L21/225 ,  H01L29/66 ,  H01L29/08

CPC classification number: H01L29/1095 ,  H01L21/225 ,  H01L21/2636 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/3221 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66272 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/732 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/8611

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 公开了一种方法和半导体器件。 该方法包括通过第一表面将复合中心原子注入到半导体本体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。

公开(公告)号：US09209027B1

公开(公告)日：2015-12-08

申请号：US14459391

申请日：2014-08-14

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer

IPC: H01L21/00 ,  H01L21/265 ,  H01L29/66

CPC classification number: H01L21/26506 ,  H01L21/221 ,  H01L21/2652 ,  H01L21/324 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66234 ,  H01L29/732 ,  H01L29/8611

Abstract: A method includes implanting recombination center atoms via a first surface into a semiconductor body and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 一种方法包括通过第一表面将复合中心原子注入到半导体体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。

公开(公告)号：US09484221B2

公开(公告)日：2016-11-01

申请号：US14153377

申请日：2014-01-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer

IPC: H01L29/06 ,  H01L21/324 ,  H01L29/66 ,  H01L29/739 ,  H01L29/861 ,  H01L29/08 ,  H01L21/265 ,  H01L27/07

CPC classification number: H01L21/324 ,  H01L21/26513 ,  H01L27/0727 ,  H01L27/0761 ,  H01L29/0834 ,  H01L29/66136 ,  H01L29/66348 ,  H01L29/7397 ,  H01L29/861

Abstract: A power semiconductor device has a semiconductor body having a first surface and a second surface that runs substantially parallel to the first surface. A first metallization is arranged on the first surface. A second metallization is arranged on the second surface. The semiconductor body includes an n-doped first semiconductor region spaced apart from the first metallization and having a first maximum doping concentration, an n-doped second semiconductor region having a second maximum doping concentration higher than the first maximum doping concentration and adjoining the first semiconductor region, and a third semiconductor region in ohmic contact with the second metallization, arranged between the second metallization and the second semiconductor region, and adjoining the second semiconductor region. The second semiconductor region is made of a semiconductor material which includes electrically active chalcogen impurities as donors. At least 90% of the electrically active chalcogen impurities form isolated defects in the semiconductor material.

Abstract translation: 功率半导体器件具有半导体本体，其具有基本上平行于第一表面延伸的第一表面和第二表面。 第一金属化被布置在第一表面上。 第二金属化被布置在第二表面上。 半导体本体包括与第一金属化间隔开并具有第一最大掺杂浓度的n掺杂的第一半导体区域，具有高于第一最大掺杂浓度的第二最大掺杂浓度的n掺杂的第二半导体区域并邻接第一半导体 以及与所述第二金属化欧姆接触的第三半导体区域，被布置在所述第二金属化层和所述第二半导体区域之间并邻接所述第二半导体区域。 第二半导体区域由包含作为供体的电活性硫属元素杂质的半导体材料制成。 至少90％的电活性硫族元素杂质在半导体材料中形成孤立的缺陷。

公开(公告)号：US09349799B2

公开(公告)日：2016-05-24

申请号：US14825231

申请日：2015-08-13

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Georg Bauer ,  Mario Barusic ,  Oliver Humbel ,  Hans Millonig ,  Werner Schustereder

IPC: H01L21/332 ,  H01L29/10 ,  H01L29/66 ,  H01L29/739 ,  H01L29/08 ,  H01L21/266 ,  H01L21/225 ,  H01L21/263

CPC classification number: H01L29/1095 ,  H01L21/225 ,  H01L21/2636 ,  H01L21/26506 ,  H01L21/266 ,  H01L21/3221 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/167 ,  H01L29/207 ,  H01L29/32 ,  H01L29/36 ,  H01L29/66128 ,  H01L29/66272 ,  H01L29/66325 ,  H01L29/66333 ,  H01L29/66363 ,  H01L29/732 ,  H01L29/7393 ,  H01L29/7395 ,  H01L29/744 ,  H01L29/8611

Abstract: Disclosed are a method and a semiconductor device. The method includes implanting recombination center atoms via a first surface into a semiconductor body, and causing the implanted recombination center atoms to diffuse in the semiconductor body in a first diffusion process.

Abstract translation: 公开了一种方法和半导体器件。 该方法包括通过第一表面将复合中心原子注入到半导体本体中，并且使得注入的复合中心原子在第一扩散过程中在半导体本体中扩散。