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US09355698B2 Memory and logic device and methods for performing thereof 有权
存储器和逻辑器件及其执行方法

Memory and logic device and methods for performing thereof
Abstract:
In accordance with one exemplary embodiment of the present technique, there is disclosed a spins selective device, including a first layer comprising a ferromagnetic material. The spin selective device further includes a second layer coupled to the first layer. The second layer includes at least one molecule having a specified chirality, such that when an electrical current flows between the first layer and the second layer one or more regions of the ferromagnetic material become magnetically polarized along a certain direction.
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