Invention Grant
- Patent Title: Memory and logic device and methods for performing thereof
- Patent Title (中): 存储器和逻辑器件及其执行方法
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Application No.: US14385006Application Date: 2013-03-13
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Publication No.: US09355698B2Publication Date: 2016-05-31
- Inventor: Ron Naaman , Yossef Paltiel , Sivan Kober , Gilad Gotesman
- Applicant: YEDA RESEARCH AND DEVELOPMENT CO. LTD. , YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
- Applicant Address: IL Rehovot IL Jerusalem
- Assignee: YEDA RESEARCH AND DEVELOPMENT CO. LTD.,YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
- Current Assignee: YEDA RESEARCH AND DEVELOPMENT CO. LTD.,YISSUM RESEARCH DEVELOPMENT COMPANY OF THE HEBREW UNIVERSITY OF JERUSALEM LTD.
- Current Assignee Address: IL Rehovot IL Jerusalem
- Agency: Browdy and Neimark, PLLC
- International Application: PCT/IL2013/050228 WO 20130313
- International Announcement: WO2013/136331 WO 20130919
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; B82Y10/00 ; G11C11/56 ; G11C13/00 ; H01L43/10 ; H03K19/00 ; H01L51/00 ; H01L51/05 ; H01L29/06 ; H01L27/28

Abstract:
In accordance with one exemplary embodiment of the present technique, there is disclosed a spins selective device, including a first layer comprising a ferromagnetic material. The spin selective device further includes a second layer coupled to the first layer. The second layer includes at least one molecule having a specified chirality, such that when an electrical current flows between the first layer and the second layer one or more regions of the ferromagnetic material become magnetically polarized along a certain direction.
Public/Granted literature
- US20150049542A1 MEMORY AND LOGIC DEVICE AND METHODS FOR PERFORMING THEREOF Public/Granted day:2015-02-19
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