Invention Grant
- Patent Title: Semiconductor structure and method for forming the same
- Patent Title (中): 半导体结构及其形成方法
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Application No.: US14057095Application Date: 2013-10-18
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Publication No.: US09355848B2Publication Date: 2016-05-31
- Inventor: Wei-Chih Chen , Chung-Hsien Tsai , Tung-Ming Chen , Chih-Sheng Chang , Jun-Chi Huang , Chih-Jen Lin , Yu-Hsiang Lin
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsinchu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C.
- Agent Justin King
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/28 ; H01L29/423 ; H01L21/265 ; H01L29/66 ; H01L29/78
Abstract:
A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate. A spacer structure is formed on a sidewall of the gate electrode layer. A dielectric cap film is formed to cover the gate electrode layer and the spacer structure. A source/drain implantation is performed to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.
Public/Granted literature
- US20150108587A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2015-04-23
Information query
IPC分类:
