公开(公告)号：US20150228546A1

公开(公告)日：2015-08-13

申请号：US14177233

申请日：2014-02-11

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Yu-Chun Huang ,  Shin-Chuan Huang ,  Tung-Ming Chen

IPC: H01L21/8238 ,  H01L29/78 ,  H01L21/311 ,  H01L27/092

CPC classification number: H01L21/823864 ,  H01L21/31105 ,  H01L21/31144 ,  H01L21/823807 ,  H01L27/0928 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7833 ,  H01L29/7848

Abstract: A manufacturing method for a semiconductor device includes: providing a substrate including a first gate structure disposed thereon, wherein the first gate structure includes a first gate electrode and a first hard mask covers the first gate electrode. A first oxide spacer and a silicon carbon nitride spacer are formed in sequence to surround the first gate electrode. A thermal treatment is performed to form a silicon oxycarbonitride layer between the first oxide spacer and the silicon carbon nitride spacer. Then, a second oxide spacer, a third oxide spacer, and a first silicon nitride spacer are formed on the silicon carbon nitride spacer in sequence. The first hard mask and the first silicon nitride spacer are removed. Finally, the third oxide spacer, the second oxide spacer, and silicon carbon nitride spacer are removed entirely to expose the silicon oxycarbonitride layer.

Abstract translation: 半导体器件的制造方法包括：提供包括设置在其上的第一栅极结构的衬底，其中所述第一栅极结构包括第一栅电极和第一硬掩模覆盖所述第一栅电极。 依次形成第一氧化物间隔物和硅氮化物间隔物以包围第一栅电极。 进行热处理以在第一氧化物间隔物和硅氮化硅间隔物之间​​形成硅碳氮氧化物层。 然后依次在硅氮化物间隔物上形成第二氧化物间隔物，第三氧化物间隔物和第一氮化硅间隔物。 去除第一硬掩模和第一氮化硅间隔物。 最后，完全除去第三氧化物间隔物，第二氧化物间隔物和硅氮化物间隔物以露出硅碳氮氧化物层。

公开(公告)号：US20150108587A1

公开(公告)日：2015-04-23

申请号：US14057095

申请日：2013-10-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Chih Chen ,  Chung-Hsien Tsai ,  Tung-Ming Chen ,  Chih-Sheng Chang ,  Jun-Chi Huang ,  Chih-Jen Lin ,  Yu-Hsiang Lin

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L21/28052 ,  H01L21/2652 ,  H01L21/28114 ,  H01L29/42372 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843 ,  H01L29/7847

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate. A spacer structure is formed on a sidewall of the gate electrode layer. A dielectric cap film is formed to cover the gate electrode layer and the spacer structure. A source/drain implantation is performed to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.

Abstract translation: 提供半导体结构及其形成方法。 该方法包括以下步骤。 在基板上形成栅极电极层。 间隔结构形成在栅电极层的侧壁上。 形成介电盖膜以覆盖栅电极层和间隔结构。 在介质盖膜暴露于源极/漏极注入的条件下，对衬底进行源极/漏极注入。

公开(公告)号：US09355848B2

公开(公告)日：2016-05-31

申请号：US14057095

申请日：2013-10-18

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Wei-Chih Chen ,  Chung-Hsien Tsai ,  Tung-Ming Chen ,  Chih-Sheng Chang ,  Jun-Chi Huang ,  Chih-Jen Lin ,  Yu-Hsiang Lin

IPC: H01L21/336 ,  H01L21/28 ,  H01L29/423 ,  H01L21/265 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/28052 ,  H01L21/2652 ,  H01L21/28114 ,  H01L29/42372 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7843 ,  H01L29/7847

Abstract: A semiconductor structure and a method for forming the same are provided. The method includes following steps. A gate electrode layer is formed on a substrate. A spacer structure is formed on a sidewall of the gate electrode layer. A dielectric cap film is formed to cover the gate electrode layer and the spacer structure. A source/drain implantation is performed to the substrate with the dielectric cap film exposed to a condition of the source/drain implantation.

Abstract translation: 提供半导体结构及其形成方法。 该方法包括以下步骤。 在基板上形成栅极电极层。 间隔结构形成在栅电极层的侧壁上。 形成介电盖膜以覆盖栅电极层和间隔结构。 在介质盖膜暴露于源极/漏极注入的条件下，对衬底进行源极/漏极注入。

公开(公告)号：US09006058B1

公开(公告)日：2015-04-14

申请号：US14150489

申请日：2014-01-08

Applicant: United Microelectronics Corp.

Inventor： Tung-Ming Chen ,  Yu-Chun Huang ,  Shin-Chuan Huang ,  Chia-Jong Liu ,  I-Fang Huang

IPC: H01L21/8238 ,  H01L29/66

CPC classification number: H01L21/823814 ,  H01L21/8238 ,  H01L21/823807 ,  H01L21/823864 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

Abstract: A method for fabricating a semiconductor device is described. A semiconductor substrate is provided, wherein the substrate has a first area and a second area. A first gate structure and a second gate structure are formed over the substrate in the first area and the substrate in the second area, respectively. A first spacer is framed on the sidewall of each gate structure. At least one etching process including at least one wet etching process is performed. The first spacer is removed. A second spacer is formed on the sidewall of each gate structure. A mask layer is formed in the second area. Ion implantation is formed using the mask layer, the first gate structure and the second spacer as a mask to form S/D extensions in the substrate beside the first gate structure in the first area. The mask layer is then removed.

Abstract translation: 对半导体装置的制造方法进行说明。 提供一种半导体衬底，其中衬底具有第一区域和第二区域。 第一栅极结构和第二栅极结构分别在第一区域和第二区域中的衬底上形成在衬底上。 第一间隔件框架在每个栅极结构的侧壁上。 执行包括至少一个湿蚀刻工艺的至少一个蚀刻工艺。 第一个垫片被去除。 在每个栅极结构的侧壁上形成第二间隔物。 在第二区域中形成掩模层。 使用掩模层，第一栅极结构和第二间隔物作为掩模形成离子注入，以在第一区域中的第一栅极结构旁边的衬底中形成S / D延伸。 然后去除掩模层。