发明授权
- 专利标题： Semiconductor devices and methods of manufacturing the same
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US13588393申请日： 2012-08-17
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公开(公告)号： US09355851B2公开(公告)日： 2016-05-31
- 发明人: Jong-Won Hong , Hei-Seung Kim , Kyoung-hee Nam , In-sun Park , Jong-Myeong Lee
- 申请人： Jong-Won Hong , Hei-Seung Kim , Kyoung-hee Nam , In-sun Park , Jong-Myeong Lee
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR1020110126479 20111130
- 主分类号： H01L21/762
- IPC分类号： H01L21/762 ; H01L21/763 ; H01L21/288 ; H01L23/532 ; H01L27/115 ; H01L21/768 ; H01L27/108
摘要：
A semiconductor device includes a metal pattern filling a trench formed through at least a portion of an insulating interlayer on a substrate and including copper, and a wetting improvement layer pattern in the metal pattern including at least one of tantalum, tantalum nitride, titanium, titanium nitride, ruthenium, cobalt and manganese.
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