Invention Grant
- Patent Title: Substrates and methods of forming a pattern on a substrate
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Application No.: US14788890Application Date: 2015-07-01
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Publication No.: US09358753B2Publication Date: 2016-06-07
- Inventor: Vishal Sipani , David A. Kewley , Kyle Armstrong , Michael Dean Van Patten , Michael D. Hyatt
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: B32B3/30
- IPC: B32B3/30 ; G03F7/00 ; G03F7/20 ; G03F7/40 ; H01L21/311 ; H01L21/033
Abstract:
Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.
Public/Granted literature
- US20150321447A1 Substrates And Methods Of Forming A Pattern On A Substrate Public/Granted day:2015-11-12
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