Invention Grant
- Patent Title: Semiconductor device with charge carrier lifetime reduction means
- Patent Title (中): 具有载流子寿命降低装置的半导体器件
-
Application No.: US13923436Application Date: 2013-06-21
-
Publication No.: US09362349B2Publication Date: 2016-06-07
- Inventor: Dorothea Werber , Frank Pfirsch , Hans-Joachim Schulze , Carsten Schaeffer , Volodymyr Komarnitskyy , Anton Mauder , Holger Schulze , Gerhard Miller
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/739 ; H01L29/06 ; H01L29/861 ; H01L29/423 ; H01L29/78 ; H01L29/08 ; H01L29/40 ; H01L29/417 ; H01L29/10
Abstract:
A semiconductor device includes a cell region having at least one device cell, wherein the at least one device cell includes a first device region of a first conductivity type. The semiconductor device further includes a drift region of a second conductivity type adjoining the first device region of the at least one device cell, a doped region of the first conductivity type adjoining the drift region, and charge carrier lifetime reduction means configured to reduce a charge carrier lifetime in the doped region of the first conductivity type.
Public/Granted literature
- US20140015007A1 Semiconductor Device with Charge Carrier Lifetime Reduction Means Public/Granted day:2014-01-16
Information query
IPC分类:
