Invention Grant
- Patent Title: Buffer layers for metal oxide semiconductors for TFT
- Patent Title (中): 用于TFT的金属氧化物半导体的缓冲层
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Application No.: US14203433Application Date: 2014-03-10
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Publication No.: US09385239B2Publication Date: 2016-07-05
- Inventor: Kurtis Leschkies , Steven Verhaverbeke , Robert Visser , John M. White , Yan Ye , Dong-Kil Yim
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/49
Abstract:
The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.
Public/Granted literature
- US20140264354A1 BUFFER LAYERS FOR METAL OXIDE SEMICONDUCTORS FOR TFT Public/Granted day:2014-09-18
Information query
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