公开(公告)号：US08975625B2

公开(公告)日：2015-03-10

申请号：US13932340

申请日：2013-07-01

Applicant: Applied Materials, Inc.

Inventor： Yan Ye ,  Harvey You

IPC: H01L29/10 ,  H01L29/786 ,  H01L21/283 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L29/24

Abstract: Embodiments disclosed herein generally relate to thin film transistors with one or more trenches to control the threshold voltage and off-current and methods of making the same. In one embodiment, a semiconductor device can include a substrate comprising a surface with a thin film transistor formed thereon, a first passivation layer formed over the thin film transistor, a trench formed within the first passivation layer and a second passivation layer formed over the first passivation layer and within the trench.

Abstract translation: 本文公开的实施例通常涉及具有一个或多个沟槽以控制阈值电压和截止电流的薄膜晶体管及其制造方法。 在一个实施例中，半导体器件可以包括衬底，该衬底包括其上形成有薄膜晶体管的表面，形成在薄膜晶体管上的第一钝化层，形成在第一钝化层内的沟槽和形成在第一钝化层上的第二钝化层 钝化层和沟槽内。

公开(公告)号：US09385239B2

公开(公告)日：2016-07-05

申请号：US14203433

申请日：2014-03-10

Applicant: Applied Materials, Inc.

Inventor： Kurtis Leschkies ,  Steven Verhaverbeke ,  Robert Visser ,  John M. White ,  Yan Ye ,  Dong-Kil Yim

IPC: H01L29/786 ,  H01L29/49

CPC classification number: H01L29/7869 ,  H01L29/4908

Abstract: The present invention generally relates to a thin film semiconductor device having a buffer layer formed between the semiconductor layer and one or more layers. In one embodiment, a thin film semiconductor device includes a semiconductor layer having a first work function and a first electron affinity level, a buffer layer having a second work function greater than the first work function and a second electron affinity level that is less than the first electron affinity level; and a gate dielectric layer having a third work function less than the second work function and a third electron affinity level that is greater than the second electron affinity level.

Abstract translation: 本发明一般涉及一种在半导体层与一层或多层之间形成缓冲层的薄膜半导体器件。 在一个实施例中，薄膜半导体器件包括具有第一功函数和第一电子亲和度的半导体层，具有大于第一功函数的第二功函数的缓冲层和小于第一功函数的第二电子亲和度 第一电子亲和力水平; 以及具有小于第二功函数的第三功函数和大于第二电子亲和度的第三电子亲和度的栅介质层。

公开(公告)号：US08614007B2

公开(公告)日：2013-12-24

申请号：US13765198

申请日：2013-02-12

Applicant: Applied Materials, Inc.

Inventor： Yan Ye

IPC: H01L29/12

CPC classification number: H01L27/016 ,  C23C14/0036 ,  C23C14/0676 ,  H01L21/02521 ,  H01L21/02554 ,  H01L21/0257 ,  H01L21/02631 ,  H01L29/22 ,  H01L29/7869

Abstract: The present invention generally comprises a semiconductor film and the reactive sputtering process used to deposit the semiconductor film. The sputtering target may comprise pure zinc (i.e., 99.995 atomic percent or greater), which may be doped with aluminum (about 1 atomic percent to about 20 atomic percent) or other doping metals. The zinc target may be reactively sputtered by introducing nitrogen and oxygen to the chamber. The amount of nitrogen may be significantly greater than the amount of oxygen and argon gas. The amount of oxygen may be based upon a turning point of the film structure, the film transmittance, a DC voltage change, or the film conductivity based upon measurements obtained from deposition without the nitrogen containing gas. The reactive sputtering may occur at temperatures from about room temperature up to several hundred degrees Celsius. After deposition, the semiconductor film may be annealed to further improve the film mobility.

公开(公告)号：US09871124B2

公开(公告)日：2018-01-16

申请号：US15412519

申请日：2017-01-23

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry Chen ,  Soo Young Choi ,  Dong-Kil Yim ,  Yan Ye

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02565 ,  H01L29/78606 ,  H01L29/7869

Abstract: The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source and drain electrodes are formed, but before the passivation layers or etch stop layers are deposited thereover, the active channel is exposed to an N2O or O2 plasma. The interface between the active channel and the passivation layers or etch stop layers are either altered or damaged during formation of the source and drain electrodes. The N2O or O2 plasma alters and repairs the interface between the active channel and the passivation or etch stop layers.