Invention Grant
- Patent Title: Light sensor device and manufacturing method
- Patent Title (中): 光传感器装置及制造方法
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Application No.: US12994650Application Date: 2009-05-21
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Publication No.: US09386655B2Publication Date: 2016-07-05
- Inventor: Viet Nguyen Hoang , Radu Surdeanu , Pascal Bancken , Benoit Bataillou , David Van Steenwinckel
- Applicant: Viet Nguyen Hoang , Radu Surdeanu , Pascal Bancken , Benoit Bataillou , David Van Steenwinckel
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08104120 20080527; EP08104203 20080602
- International Application: PCT/IB2009/052139 WO 20090521
- International Announcement: WO2009/144645 WO 20091203
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H05B33/08 ; G01J1/02 ; G01J1/04 ; G01J1/32 ; G01J1/42
Abstract:
A light sensor device comprises a substrate (10) having a well (12) defined in one surface. At least one light sensor (14) is formed at the base of the well (12), and an optical light guide (18) in the form of a transparent tunnel (18) within an opaque body (20) extends from a top surface of the device down a sloped side wall of the well (12) to the location of the light sensor (14).
Public/Granted literature
- US20110133214A1 LIGHT SENSOR DEVICE AND MANUFACTURING METHOD Public/Granted day:2011-06-09
Information query
IPC分类:
