Integrated circuit and interconnect, and method of fabricating same

Invention Grant

US09390969B2 Integrated circuit and interconnect, and method of fabricating same 有权

Title translation: 集成电路和互连及其制造方法

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Patent Title: Integrated circuit and interconnect, and method of fabricating same
Patent Title (中): 集成电路和互连及其制造方法
Application No.: US14600273

Application Date: 2015-01-20
Publication No.: US09390969B2

Publication Date: 2016-07-12
Inventor: David A. DeMuynck , Zhong-Xiang He , Daniel R. Miga , Matthew D. Moon , Daniel S. Vanslette , Eric J. White
Applicant: GLOBALFOUNDRIES INC.
Applicant Address: KY Grand Cayman
Assignee: GlobalFoundries, Inc.
Current Assignee: GlobalFoundries, Inc.
Current Assignee Address: KY Grand Cayman
Agency: Hoffman Warnick LLC
Agent Anthony Canale
Main IPC: H01L21/4763
IPC: H01L21/4763 ; H01L21/768 ; H01L23/522 ; H01L49/02

Integrated circuit and interconnect, and method of fabricating same

Abstract:

The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect.

Abstract(Chinese):

本公开一般涉及集成电路（IC），IC互连及其制造方法，更具体地，涉及高性能电感器。 IC包括设置在基板上的电介质层内的至少一个沟槽。沟槽被保形地涂覆有衬里和种子层，并且包括内部的互连。互连包括在互连的侧壁上的硬掩模。

Public/Granted literature

US20150140809A1 INTEGRATED CIRCUIT AND INTERCONNECT, AND METHOD OF FABRICATING SAME Public/Granted day:2015-05-21

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）