公开(公告)号：US09390969B2

公开(公告)日：2016-07-12

申请号：US14600273

申请日：2015-01-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： David A. DeMuynck ,  Zhong-Xiang He ,  Daniel R. Miga ,  Matthew D. Moon ,  Daniel S. Vanslette ,  Eric J. White

IPC: H01L21/4763 ,  H01L21/768 ,  H01L23/522 ,  H01L49/02

CPC classification number: H01L21/76843 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/76846 ,  H01L21/76879 ,  H01L23/5227 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The disclosure relates generally to integrated circuits (IC), IC interconnects, and methods of fabricating the same, and more particularly, high performance inductors. The IC includes at least one trench within a dielectric layer disposed on a substrate. The trench is conformally coated with a liner and seed layer, and includes an interconnect within. The interconnect includes a hard mask on the sidewalls of the interconnect.

Abstract translation: 本公开一般涉及集成电路（IC），IC互连及其制造方法，更具体地，涉及高性能电感器。 IC包括设置在基板上的电介质层内的至少一个沟槽。 沟槽被保形地涂覆有衬里和种子层，并且包括内部的互连。 互连包括在互连的侧壁上的硬掩模。

公开(公告)号：US09577023B2

公开(公告)日：2017-02-21

申请号：US13909464

申请日：2013-06-04

Applicant: GLOBALFOUNDRIES INC.

Inventor： Edward C. Cooney, III ,  Dinh Dang ,  David A. DeMuynck ,  Sarah A. McTaggart ,  Gary L. Milo ,  Melissa J. Roma ,  Jeffrey L. Thompson ,  Thomas W. Weeks

IPC: H01F5/00 ,  H01L21/00 ,  H01L21/44 ,  H01L21/4763 ,  H01L27/08 ,  H01L49/02 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal wire in a second dielectric layer above the first dielectric layer, the second metal wire including a third vertical side opposite from a fourth vertical side, where the first vertical side is laterally offset from the third vertical side by a first predetermined distance, and the second vertical side is laterally offset from the fourth vertical side by a second predetermined distance, where the first metal wire and the second metal wire are in direct contact with one another.

Abstract translation: 一种包括在第一电介质层中形成第一金属线的方法，所述第一金属线包括与第二垂直侧相对的第一垂直侧; 以及在所述第一电介质层上方的第二电介质层中形成第二金属线，所述第二金属线包括与第四垂直侧相反的第三垂直侧，其中所述第一垂直侧从所述第三垂直侧横向偏移第一预定 距离，第二垂直侧从第四垂直侧横向偏移第二预定距离，其中第一金属线和第二金属线彼此直接接触。