Invention Grant
- Patent Title: L-shaped capacitor in thin film storage technology
- Patent Title (中): L形电容器在薄膜存储技术中
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Application No.: US14645993Application Date: 2015-03-12
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Publication No.: US09397112B1Publication Date: 2016-07-19
- Inventor: Harry-Hak-Lay Chuang , Wei Cheng Wu , Chien-Hung Chang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L27/115 ; H01L49/02 ; H01L29/51 ; H01L21/28

Abstract:
The present disclosure relates to a non-planar FEOL (front-end-of-the-line) capacitor comprising a charge trapping dielectric layer disposed between electrodes, and an associated method of fabrication. In some embodiments, the non-planar FEOL capacitor has a first electrode disposed over a substrate. A charge trapping dielectric layer is disposed onto the substrate at a position adjacent to the first electrode. The charge trapping dielectric layer has an “L” shape, with a lateral component extending in a first direction and a vertical component extending in a second direction. A second electrode is arranged onto the lateral component and is separated from the first electrode by the first component.
Public/Granted literature
- US20160233228A1 L-SHAPED CAPACITOR IN THIN FILM STORAGE TECHNOLOGY Public/Granted day:2016-08-11
Information query
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