Invention Grant
US09397177B2 Variable length multi-channel replacement metal gate including silicon hard mask
有权
可变长度多通道替代金属栅极，包括硅硬掩模
- Patent Title: Variable length multi-channel replacement metal gate including silicon hard mask
- Patent Title (中): 可变长度多通道替代金属栅极，包括硅硬掩模
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Application No.: US14088462Application Date: 2013-11-25
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Publication No.: US09397177B2Publication Date: 2016-07-19
- Inventor: Michael P. Chudzik , Siddarth A. Krishnan , Unoh Kwon
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agent Anthony J. Canale
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/088 ; H01L29/423 ; H01L27/092 ; H01L21/8238 ; H01L29/49 ; H01L21/3213 ; H01L21/28 ; H01L29/51 ; H01L29/66 ; H01L21/321
Abstract:
A method of forming a semiconductor device includes forming first and second semiconductor structures on a semiconductor substrate. The first semiconductor structure includes a first gate channel region having a first gate length, and the second semiconductor structure including a second gate channel region having a second gate length that is greater than the first gate length. The method further includes depositing a work function metal layer in each of a first gate void formed at the first gate channel region and a second gate void formed at the second gate channel region. The method further includes depositing a semiconductor masking layer on the work function metal layer, and simultaneously etching the silicon masking layer located at the first and second gate channel regions to re-expose the first and second gate voids. A low-resistive metal is deposited in the first and second gate voids to form low-resistive metal gate stacks.
Public/Granted literature
- US20150145062A1 VARIABLE LENGTH MULTI-CHANNEL REPLACEMENT METAL GATE INCLUDING SILICON HARD MASK Public/Granted day:2015-05-28
Information query
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