Methods for forming a semiconductor device are provided. In one embodiment, a gate structure having a gate insulating layer and a gate electrode structure formed on the gate insulating layer is provided. The methods provide reducing a dimension of the gate electrode structure relative to the gate insulating layer along a direction extending in parallel to a direction connecting the source and drain. A semiconductor device structure having a gate structure including a gate insulating layer and a gate electrode structure formed above the gate insulating layer is provided, wherein a dimension of the gate electrode structure extending along a direction which is substantially parallel to a direction being oriented from source to drain is reduced relative to a dimension of the gate insulating layer. According to some examples, gate structures are provided having a gate silicon length which is decoupled from the channel width induced by the gate structure.