Invention Grant
US09418744B2 System and method to reduce disturbances during programming of flash memory cells
有权
减少闪存单元编程过程中的干扰的系统和方法
- Patent Title: System and method to reduce disturbances during programming of flash memory cells
- Patent Title (中): 减少闪存单元编程过程中的干扰的系统和方法
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Application No.: US14275362Application Date: 2014-05-12
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Publication No.: US09418744B2Publication Date: 2016-08-16
- Inventor: Jinho Kim , Anh Ly , Victor Markov
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee: SILICON STORAGE TECHNOLOGY, INC.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP US
- Agent Brent Yamashita
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/08 ; G11C16/34 ; G11C8/10 ; G11C7/02 ; G11C16/14
Abstract:
An improved control gate decoding design may reduce disturbances during the programming of flash memory cells. In one embodiment, a control gate line decoder is coupled to a first control gate line associated with a row of flash memory cells in a first sector and to a second control gate line associated with a row of flash memory cells in a second sector.
Public/Granted literature
- US20150325300A1 System And Method To Reducing Disturbances During Programming Of Flash Memory Cells Public/Granted day:2015-11-12
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