发明授权
US09422455B2 CMP compositions exhibiting reduced dishing in STI wafer polishing
有权
在STI晶片抛光中显示减少的凹陷的CMP组合物
- 专利标题: CMP compositions exhibiting reduced dishing in STI wafer polishing
- 专利标题(中): 在STI晶片抛光中显示减少的凹陷的CMP组合物
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申请号: US14568311申请日: 2014-12-12
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公开(公告)号: US09422455B2公开(公告)日: 2016-08-23
- 发明人: Sudeep Pallikkara Kuttiatoor , Kevin Dockery , Prativa Pandey , Renhe Jia
- 申请人: Cabot Microelectronics Corporation
- 申请人地址: US IL Aurora
- 专利权人: Cabot Microelectronics Corporation
- 当前专利权人: Cabot Microelectronics Corporation
- 当前专利权人地址: US IL Aurora
- 代理商 Thomas Omholt; Arlene Harnilla; Francis J. Koszyk
- 主分类号: C09G1/02
- IPC分类号: C09G1/02 ; H01L21/311 ; C03C15/00 ; C23F1/16
摘要:
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
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