发明授权
US09422455B2 CMP compositions exhibiting reduced dishing in STI wafer polishing 有权
在STI晶片抛光中显示减少的凹陷的CMP组合物

CMP compositions exhibiting reduced dishing in STI wafer polishing
摘要:
The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
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