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公开(公告)号：US09771496B2
公开(公告)日：2017-09-26
申请号：US14924997
申请日：2015-10-28
发明人： Kevin Dockery , Helin Huang , Lin Fu , Tina Li
摘要： Described are chemical-mechanical polishing compositions (e.g., slurries) and methods of using the slurries for chemical-mechanical polishing (or planarizing) a surface of a substrate that contains tungsten, the compositions containing cationic surfactant and cyclodextrin.
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公开(公告)号：US09631122B1
公开(公告)日：2017-04-25
申请号：US14925054
申请日：2015-10-28
发明人： Kevin Dockery , Helin Huang , Lin Fu
摘要： Described are chemical mechanical polishing compositions and methods of using the compositions for planarizing a surface of a substrate that contains tungsten, the compositions containing silica abrasive particles and cationic surfactant.
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3.发明授权CMP compositions selective for oxide over polysilicon and nitride with high removal rate and low defectivity 有权CMP组合物选择性优于多晶硅上的氧化物和具有高去除率和低缺陷率的氮化物公开(公告)号：US09165489B2
公开(公告)日：2015-10-20
申请号：US14289728
申请日：2014-05-29
发明人： Tina Li , Kevin Dockery , Renhe Jia , Jeffrey Dysard
IPC分类号： C09K13/00 , G09G1/02 , H01L21/3105 , C09K3/14
CPC分类号： G09G1/02 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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4.发明授权公开(公告)号：US09422455B2
公开(公告)日：2016-08-23
申请号：US14568311
申请日：2014-12-12
IPC分类号： C09G1/02 , H01L21/311 , C03C15/00 , C23F1/16
CPC分类号： C09G1/02 , C03C15/00 , C23F1/16 , H01L21/31053 , H01L21/31111 , H01L21/76224
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive, an ionic polymer of formula I: wherein X1 and X2, Z1 and Z2, R1, R2, R3, and R4, and n are as defined herein, a polyhydroxy aromatic compound, a polyvinyl alcohol, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供了含有二氧化铈磨料，式I的离子聚合物的化学机械抛光组合物：其中X1和X2，Z1和Z2，R1，R2，R3和R4以及n如本文所定义，多羟基芳族化合物 ，聚乙烯醇和水，其中所述抛光组合物的pH为约1至约4.5。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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5.发明申请CMP COMPOSITIONS SELECTIVE FOR OXIDE OVER POLYSILICON AND NITRIDE WITH HIGH REMOVAL RATE AND LOW DEFECTIVITY 有权选择用于具有高除去速率和低缺陷度的多晶硅和氮化物的氧化物的CMP组合物公开(公告)号：US20140349483A1
公开(公告)日：2014-11-27
申请号：US14289728
申请日：2014-05-29
发明人： Tina LI , Kevin Dockery , Renhe Jia , Jeffrey Dysard
IPC分类号： H01L21/306 , C09G1/02
CPC分类号： G09G1/02 , C09G1/02 , C09K3/1463 , H01L21/31053
摘要： The invention provides a chemical-mechanical polishing composition containing a ceria abrasive and a polymer of formula I: wherein X1 and X2, Y1 and Y2, Z1 and Z2, R1, R2, R3, and R4, and m are as defined herein, and water, wherein the polishing composition has a pH of about 1 to about 4.5. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon oxide, silicon nitride, and/or polysilicon.
摘要翻译： 本发明提供一种含有二氧化铈研磨剂和式I的聚合物的化学机械抛光组合物：其中X1和X2，Y1和Y2，Z1和Z2，R1，R2，R3和R4以及m如本文所定义， 水，其中所述抛光组合物具有约1至约4.5的pH。 本发明还提供了利用本发明的化学 - 机械抛光组合物对衬底进行化学机械抛光的方法。 通常，衬底含有氧化硅，氮化硅和/或多晶硅。
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