Invention Grant
- Patent Title: Memory apparatus and memory device
- Patent Title (中): 存储设备和存储设备
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Application No.: US14399268Application Date: 2013-03-06
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Publication No.: US09424903B2Publication Date: 2016-08-23
- Inventor: Yutaka Higo , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Tetsuya Asayama , Kazutaka Yamane , Hiroyuki Uchida
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: K&L Gates LLP
- Priority: JP2012-112424 20120516
- International Application: PCT/JP2013/001377 WO 20130306
- International Announcement: WO2013/171947 WO 20131121
- Main IPC: G11C5/08
- IPC: G11C5/08 ; G11C11/16 ; H01L43/08 ; H01L27/22

Abstract:
To provide a memory apparatus capable of operating at high speed with less current and inhibiting a decrease in an amplitude of a readout signal.A memory apparatus includes a memory device at least including a memory layer, a magnetic fixed layer, and an intermediate layer made of a non-magnetic body disposed between the memory layer and the magnetic fixed layer; current being capable of flowing in a lamination direction; a wiring for supplying current flowing to the lamination direction; and a memory control unit for storing information by flowing standby current at a predetermined level to the memory device via the wiring to incline the magnetization direction of the memory layer from the direction perpendicular to a film surface and flowing recording current that is higher than the standby current via the wiring to change the magnetization direction of the memory layer.
Public/Granted literature
- US20150109846A1 MEMORY APPARATUS AND MEMORY DEVICE Public/Granted day:2015-04-23
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