发明授权
- 专利标题: Electronic component manufacturing method and electrode structure
- 专利标题(中): 电子元件制造方法和电极结构
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申请号: US14327985申请日: 2014-07-10
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公开(公告)号: US09437702B2公开(公告)日: 2016-09-06
- 发明人: Akira Matsuo , Yohsuke Shibuya , Naomu Kitano , Eitaroh Morimoto , Koji Yamazaki , Yu Sato , Takuya Seino
- 申请人: CANON ANELVA CORPORATION
- 申请人地址: JP Kawasaki-Shi
- 专利权人: CANON ANELVA CORPORATION
- 当前专利权人: CANON ANELVA CORPORATION
- 当前专利权人地址: JP Kawasaki-Shi
- 代理机构: Fitzpatrick, Cella, Harper & Scinto
- 优先权: JP2012-012240 20120124
- 主分类号: H01L29/41
- IPC分类号: H01L29/41 ; H01L21/28 ; H01L21/321 ; H01L21/3205 ; H01L29/49 ; C23C14/35 ; H01L21/8238 ; C23C14/04 ; C23C14/34 ; C23C14/58 ; H01J37/34 ; H01L29/66 ; H01L21/285 ; H01L21/768
摘要:
It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.