公开(公告)号：US09929340B2

公开(公告)日：2018-03-27

申请号：US15653702

申请日：2017-07-19

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino

IPC: H01L43/00 ,  H01L43/12 ,  H01L43/02 ,  H01L43/08

CPC classification number: H01L43/12 ,  H01L29/82 ,  H01L43/02 ,  H01L43/08

Abstract: An embodiment of the present invention is a method of manufacturing a perpendicular MTJ device which includes: a first stacked structure including a pair of CoFeB layers sandwiching an MgO layer; and a second stacked structure including a multilayer, the method comprising the steps of: forming one of the first and second stacked structures on a substrate; inspecting a property of the substrate with the one of the first and second stacked structures formed thereon while exposing the substrate to the atmosphere; and forming another one of the first and second stacked structures on the substrate with the one of the first and second stacked structures formed thereon.

公开(公告)号：US09905441B2

公开(公告)日：2018-02-27

申请号：US14742067

申请日：2015-06-17

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshimitsu Shimane ,  Takuya Seino

IPC: H01L43/12 ,  H01L21/67 ,  C23C16/458 ,  C23C16/455 ,  C23C16/46 ,  C23C8/10 ,  C23C14/16 ,  C23C14/58

CPC classification number: H01L21/67109 ,  C23C8/10 ,  C23C14/16 ,  C23C14/5853 ,  C23C16/45565 ,  C23C16/458 ,  C23C16/46 ,  H01L43/12

Abstract: An oxidation process apparatus according to one embodiment of the present invention includes: a substrate holder provided in a processing chamber and having a substrate holding surface; a gas introduction unit for introducing an oxygen gas; a cylindrical member; and a substrate holder drive unit for changing relative positions of the substrate holder and the cylindrical member to allow the substrate holding surface and the cylindrical member to form an oxidation process space. The cylindrical member is provided so as to form a gap between the cylindrical member and the substrate holder during formation of the space. The oxygen gas is introduced restrictively into the space. The oxygen gas introduced from the gas introduction unit is evacuated through the gap.

公开(公告)号：US20160276583A1

公开(公告)日：2016-09-22

申请号：US15168898

申请日：2016-05-31

Applicant: CANON ANELVA CORPORATION

Inventor： Yuichi Otani ,  Takuya Seino

IPC: H01L43/12 ,  H01J37/34 ,  H01F10/12 ,  H01L43/10 ,  G11C11/16 ,  H01L43/02 ,  C23C14/34 ,  H01L43/08

CPC classification number: H01L43/12 ,  C23C14/081 ,  C23C14/225 ,  C23C14/3407 ,  C23C14/352 ,  G01R33/0052 ,  G01R33/098 ,  G11C11/161 ,  H01F10/123 ,  H01F10/3236 ,  H01F10/3272 ,  H01F41/307 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3476 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method includes: a first film formation process forming a film by sputtering a first insulator target when a projection plane of the first insulator target on a plane including a front face of a substrate is in a first state; and a second film formation process forming a film by sputtering a second insulator target when a projection plane of the second insulator target formed on the plane including the front face of the substrate is in a second state different from the first state. The second film formation process provides the insulating film having a second characteristic variation having opposite tendency to a first characteristic variation in the film provided by the first film formation process, the first characteristic variation occurring from a center portion to a peripheral portion of the substrate, the second characteristic variation occurring at least partly from the center portion to the peripheral portion.

Abstract translation: 一种方法包括：当在包括基板的正面的平面上的第一绝缘体靶的投影平面处于第一状态时，通过溅射第一绝缘体靶来形成膜的第一成膜工艺; 以及第二成膜工艺，当形成在包括衬底的前表面的平面上的第二绝缘体靶的投影平面处于与第一状态不同的第二状态时，通过溅射第二绝缘体靶来形成膜。 第二成膜工艺提供了具有第二特征变化的绝缘膜，该第二特征变化具有与通过第一成膜工艺提供的膜中的第一特征变化相反的倾向，第一特征变化从基板的中心部分到周边部分发生， 所述第二特征变化至少部分地从所述中心部分发生到所述周边部分。

公开(公告)号：US20160240772A1

公开(公告)日：2016-08-18

申请号：US15134840

申请日：2016-04-21

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Yuichi Otani ,  Kazumasa Nishimura

IPC: H01L43/12 ,  H01L27/22

CPC classification number: H01L43/12 ,  H01F10/123 ,  H01F10/3286 ,  H01F41/302 ,  H01L21/67109 ,  H01L21/68742 ,  H01L27/222

Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

Abstract translation: 本发明提供了一种具有比常规元件高的MR比的磁阻效应元件的制造方法。 本发明实施例的磁阻效应元件的制造方法包括：在形成有磁化自由层和磁化固定层的表面上的基板上形成隧道势垒层的工序; 在形成隧道势垒层的步骤之后冷却衬底的步骤; 在冷却步骤之后在隧道势垒层上形成磁化自由层和磁化固定层中的另一个的步骤; 以及在形成另一个磁化自由层和磁化固定层的步骤之后提高衬底的温度的步骤。

公开(公告)号：US10153426B2

公开(公告)日：2018-12-11

申请号：US15134840

申请日：2016-04-21

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Yuichi Otani ,  Kazumasa Nishimura

IPC: H01L27/22 ,  H01L43/12 ,  H01L21/67 ,  H01L21/687 ,  H01F41/30 ,  H01F10/12 ,  H01F10/32

Abstract: This invention provides a manufacturing method of a magnetoresistive effect element having a higher MR ratio than a conventional element. A manufacturing method of a magnetoresistive effect element of an embodiment of the invention includes: a step of forming a tunnel barrier layer on a substrate, on a surface of which one of a magnetization free layer and a magnetization fixed layer is formed; a step of cooling the substrate after the step of forming a tunnel barrier layer; a step of forming an other one of the magnetization free layer and the magnetization fixed layer on the tunnel barrier layer after the step of cooling; and a step of raising a temperature of the substrate after the step of forming the other one of the magnetization free layer and the magnetization fixed layer.

公开(公告)号：US10083830B2

公开(公告)日：2018-09-25

申请号：US15161892

申请日：2016-05-23

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Manabu Ikemoto ,  Kimiko Mashimo

IPC: H01L21/02 ,  H01L21/28 ,  H01L21/67 ,  H01J37/32 ,  H01L29/51 ,  H01L29/49 ,  H01L29/66

CPC classification number: H01L21/02049 ,  H01J37/32091 ,  H01J37/3244 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/67196 ,  H01L29/4916 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4975 ,  H01L29/517 ,  H01L29/66651

Abstract: It was found out that when radicals generated by plasma are fed to a treatment chamber via a plurality of holes (111) formed on a partition plate which separates a plasma-forming chamber (108) from the treatment chamber, and the radicals are mixed with a treatment gas which is separately fed to the treatment chamber, the excitation energy of the radicals is suppressed and thereby the substrate surface treatment at high Si-selectivity becomes possible, which makes it possible to conduct the surface treatment of removing native oxide film and organic matter without deteriorating the flatness of the substrate surface. The radicals in the plasma are fed to the treatment chamber via radical-passing holes (111) of a plasma-confinement electrode plate (110) for plasma separation, the treatment gas is fed to the treatment chamber (121) to be mixed with the radicals in the treatment chamber, and then the substrate surface is cleaned by the mixed atmosphere of the radicals and the treatment gas.

公开(公告)号：US09865805B2

公开(公告)日：2018-01-09

申请号：US14742169

申请日：2015-06-17

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Kazumasa Nishimura ,  Hiroki Okuyama ,  Yuichi Otani ,  Yuta Murooka ,  Yoshimitsu Shimane

IPC: H01L21/00 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  H01L21/02 ,  H01L37/00 ,  H01L41/20 ,  H01L21/28

CPC classification number: H01L43/12 ,  H01L21/02104 ,  H01L21/02205 ,  H01L21/0226 ,  H01L21/02263 ,  H01L21/02271 ,  H01L21/02436 ,  H01L21/28061 ,  H01L37/00 ,  H01L41/20 ,  H01L43/08 ,  H01L43/10

Abstract: Provided is a method for manufacturing a magnetoresistive element, including a step of forming a tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes a deposition step of depositing a metal film on top of a substrate, and an oxidation step of subjecting the metal film to an oxidation process. The oxidation step includes holding the substrate having Mg formed thereon, on a substrate holder in a processing container in which the oxidation process is performed, supplying an oxygen gas to the substrate by introducing the oxygen gas into the processing container, at a temperature at which Mg does not sublime, and heating the substrate after the introduction of the oxygen gas.

公开(公告)号：US09853207B2

公开(公告)日：2017-12-26

申请号：US15258096

申请日：2016-09-07

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Kazumasa Nishimura ,  Toshikazu Irisawa ,  Saki Shibuichi

IPC: H01L43/10 ,  H01L43/08 ,  G01R33/09 ,  G11C11/16 ,  H01F10/32 ,  H01L43/12

CPC classification number: H01L43/10 ,  G01R33/098 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

公开(公告)号：US20160380187A1

公开(公告)日：2016-12-29

申请号：US15258096

申请日：2016-09-07

Applicant: CANON ANELVA CORPORATION

Inventor： Takuya Seino ,  Kazumasa Nishimura ,  Toshikazu Irisawa ,  Saki Shibuichi

IPC: H01L43/10 ,  H01L43/08

CPC classification number: H01L43/10 ,  G01R33/098 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/3272 ,  H01F10/3286 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetoresistance effect element of the present invention includes: a barrier layer; a reference layer formed on one surface of the barrier layer; a free layer formed on the other surface of the barrier layer; and a pinned layer placed on the opposite side of the reference layer from the barrier layer. The pinned layer includes a structure obtained by stacking Ni, Co, Pt, Co, Ru, Co, Pt, Co, and Ni layers in this order.

Abstract translation: 本发明的磁阻效应元件包括：阻挡层; 形成在阻挡层的一个表面上的参考层; 形成在阻挡层的另一个表面上的自由层; 以及被放置在与阻挡层相反的参考层的一侧的被钉扎层。 被钉扎层包括依次堆叠Ni，Co，Pt，Co，Ru，Co，Pt，Co和Ni层而获得的结构。

公开(公告)号：US11035034B2

公开(公告)日：2021-06-15

申请号：US15416720

申请日：2017-01-26

Applicant: CANON ANELVA CORPORATION

Inventor： Yoshiaki Daigo ,  Takuya Seino ,  Yoshitaka Ohtsuka ,  Hiroyuki Makita ,  Sotaro Ishibashi ,  Kazuto Yamanaka

IPC: C23C14/06 ,  C23C14/08 ,  C23C14/34 ,  C23C14/50 ,  C23C14/54 ,  C30B23/00 ,  C30B23/06 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/16 ,  H01L33/32 ,  C30B23/08 ,  C30B29/16 ,  H01L33/28

Abstract: The present invention provides a film formation method and a film formation apparatus which can fabricate an epitaxial film with +c polarity by a sputtering method. In one embodiment of the present invention, the film formation method of epitaxially growing a semiconductor thin film with a wurtzite structure by the sputtering method on an epitaxial growth substrate heated to a predetermined temperature by a heater includes the following steps. First, the substrate is disposed on a substrate holding portion including the heater to be located at a predetermined distance away from the heater. Then, the epitaxial film of the semiconductor film with the wurtzite structure is formed on the substrate with the impedance of the substrate holding portion being adjusted.