Invention Grant
- Patent Title: Multichip power semiconductor device
- Patent Title (中): 多芯片功率半导体器件
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Application No.: US14543557Application Date: 2014-11-17
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Publication No.: US09443760B2Publication Date: 2016-09-13
- Inventor: Joachim Mahler , Thomas Bemmerl , Anton Prueckl
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/768 ; H01L23/13 ; H01L23/433 ; H01L23/495 ; H01L23/00 ; H01L23/498 ; H01L25/07 ; H01L25/00 ; H01L23/31

Abstract:
An electronic device includes a first chip carrier and a second chip carrier isolated from the first chip carrier. A first power semiconductor chip is mounted on and electrically connected to the first chip carrier. A second power semiconductor chip is mounted on and electrically connected to the second chip carrier. An electrically insulating material is configured to at least partially surround the first power semiconductor chip and the second power semiconductor chip. An electrical interconnect is configured to electrically connect the first power semiconductor chip to the second power semiconductor chip, wherein the electrical interconnect has at least one of a contact clip and a galvanically deposited conductor.
Public/Granted literature
- US20150064844A1 Multichip Power Semiconductor Device Public/Granted day:2015-03-05
Information query
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