Invention Grant
- Patent Title: Method of forming semiconductor device
- Patent Title (中): 半导体器件形成方法
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Application No.: US14506009Application Date: 2014-10-03
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Publication No.: US09443952B2Publication Date: 2016-09-13
- Inventor: Chun-Tsen Lu , Chih-Jung Su , Jian-Wei Chen , Shui-Yen Lu , Yi-Wen Chen , Po-Cheng Huang , Chen-Ming Huang , Shih-Fang Tzou
- Applicant: United Microelectronics Corp.
- Applicant Address: TW Hsinchu
- Assignee: United Microelectronics Corp.
- Current Assignee: United Microelectronics Corp.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/8234 ; H01L21/3105 ; H01L21/311 ; H01L21/02 ; H01L21/8238 ; H01L29/49 ; H01L29/51
Abstract:
A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.
Public/Granted literature
- US20160099179A1 METHOD OF FORMING SEMICONDUCTOR DEVICE Public/Granted day:2016-04-07
Information query
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