公开(公告)号：US10043882B2

公开(公告)日：2018-08-07

申请号：US15863990

申请日：2018-01-08

申请人： UNITED MICROELECTRONICS CORP.

发明人： Po-Wen Su ,  Zhen Wu ,  Hsiao-Pang Chou ,  Chiu-Hsien Yeh ,  Shui-Yen Lu ,  Jian-Wei Chen

IPC分类号： H01L29/51 ,  H01L29/40 ,  H01L29/423 ,  H01L21/82 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/66

摘要： A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.

公开(公告)号：US09443952B2

公开(公告)日：2016-09-13

申请号：US14506009

申请日：2014-10-03

申请人： United Microelectronics Corp.

发明人： Chun-Tsen Lu ,  Chih-Jung Su ,  Jian-Wei Chen ,  Shui-Yen Lu ,  Yi-Wen Chen ,  Po-Cheng Huang ,  Chen-Ming Huang ,  Shih-Fang Tzou

IPC分类号： H01L21/3205 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC分类号： H01L29/66545 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02271 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/4966 ,  H01L29/517

摘要： A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.

摘要翻译： 公开了一种形成半导体器件的方法。 提供具有多个翅片的基板。 绝缘层填充两个相邻翅片之间的间隙的下部。 在一个翅片上形成至少一个第一堆叠结构，并且在一个绝缘层上形成至少一个第二堆叠结构。 形成第一电介质层以覆盖第一和第二堆叠结构。 去除第一电介质层的一部分和第一和第二堆叠结构的部分。 去除第一电介质层的另一部分，直到剩余的第一电介质层的顶部低于第一和第二堆叠结构的顶部。 形成第二电介质层以覆盖第一和第二堆叠结构。 去除第二电介质层的一部分直到第一和第二堆叠结构的顶部露出。

公开(公告)号：US09899491B2

公开(公告)日：2018-02-20

申请号：US15182620

申请日：2016-06-15

申请人： UNITED MICROELECTRONICS CORP.

发明人： Po-Wen Su ,  Zhen Wu ,  Hsiao-Pang Chou ,  Chiu-Hsien Yeh ,  Shui-Yen Lu ,  Jian-Wei Chen

IPC分类号： H01L29/51 ,  H01L21/82 ,  H01L27/088 ,  H01L29/66 ,  H01L29/40 ,  H01L21/8234 ,  H01L29/423

CPC分类号： H01L29/512 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78

摘要： A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

公开(公告)号：US20170330952A1

公开(公告)日：2017-11-16

申请号：US15182620

申请日：2016-06-15

申请人： UNITED MICROELECTRONICS CORP.

发明人： Po-Wen Su ,  Zhen Wu ,  Hsiao-Pang Chou ,  Chiu-Hsien Yeh ,  Shui-Yen Lu ,  Jian-Wei Chen

IPC分类号： H01L29/51 ,  H01L29/423 ,  H01L29/40 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/66

CPC分类号： H01L29/512 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78

摘要： A semiconductor device and a method of forming the same, the semiconductor device include a substrate, and a first gate structure and a second gate structure disposed on the substrate. The first gate structure includes a barrier layer, a first work function layer, a second work function layer and a conductive layer stacked one over another on the substrate. The second gate structure includes the barrier layer, a portion of the first work function layer and the conductive layer stacked one over another on the substrate, wherein the portion of the first work function layer has a smaller thickness than a thickness of the first work function layer.

公开(公告)号：US20160099179A1

公开(公告)日：2016-04-07

申请号：US14506009

申请日：2014-10-03

申请人： United Microelectronics Corp.

发明人： Chun-Tsen Lu ,  Chih-Jung Su ,  Jian-Wei Chen ,  Shui-Yen Lu ,  Yi-Wen Chen ,  Po-Cheng Huang ,  Chen-Ming Huang ,  Shih-Fang Tzou

IPC分类号： H01L21/8234 ,  H01L29/66 ,  H01L21/311 ,  H01L21/02 ,  H01L29/06 ,  H01L21/3105

CPC分类号： H01L29/66545 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/02271 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/311 ,  H01L21/31144 ,  H01L21/823431 ,  H01L21/823821 ,  H01L29/4966 ,  H01L29/517

摘要： A method of forming a semiconductor device is disclosed. A substrate having multiple fins is provided. An insulating layer fills a lower portion of a gap between two adjacent fins. At least one first stacked structure is formed on one fin and at least one second stacked structure is formed on one insulation layer. A first dielectric layer is formed to cover the first and second stacked structures. A portion of the first dielectric layer and portions of the first and second stacked structures are removed. Another portion of the first dielectric layer is removed until a top of the remaining first dielectric layer is lower than tops of the first and second stacked structures. A second dielectric layer is formed to cover the first and second stacked structures. A portion of the second dielectric layer is removed until the tops of the first and second stacked structures are exposed.

摘要翻译： 公开了一种形成半导体器件的方法。 提供具有多个翅片的基板。 绝缘层填充两个相邻翅片之间的间隙的下部。 在一个翅片上形成至少一个第一堆叠结构，并且在一个绝缘层上形成至少一个第二堆叠结构。 形成第一电介质层以覆盖第一和第二堆叠结构。 去除第一电介质层的一部分和第一和第二堆叠结构的部分。 去除第一电介质层的另一部分，直到剩余的第一电介质层的顶部低于第一和第二堆叠结构的顶部。 形成第二电介质层以覆盖第一和第二堆叠结构。 去除第二电介质层的一部分直到第一和第二堆叠结构的顶部露出。

公开(公告)号：US20180151685A1

公开(公告)日：2018-05-31

申请号：US15863990

申请日：2018-01-08

申请人： UNITED MICROELECTRONICS CORP.

发明人： Po-Wen Su ,  Zhen Wu ,  Hsiao-Pang Chou ,  Chiu-Hsien Yeh ,  Shui-Yen Lu ,  Jian-Wei Chen

IPC分类号： H01L29/51 ,  H01L29/66 ,  H01L29/423 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/40

CPC分类号： H01L29/512 ,  H01L21/82345 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/401 ,  H01L29/4236 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/78

摘要： A method of forming a semiconductor device includes the following steps. A substrate is provided, and the substrate has a first region. A barrier layer is then formed on the first region of the substrate. A first work function layer is formed on the barrier layer. An upper half portion of the first work function layer is converted into a non-volatile material layer. The non-volatile material layer is removed and a lower half portion of the first work function layer is kept.