Invention Grant
- Patent Title: Contact critical dimension control
- Patent Title (中): 接触关键尺寸控制
-
Application No.: US15047809Application Date: 2016-02-19
-
Publication No.: US09449922B2Publication Date: 2016-09-20
- Inventor: Tain-Shang Chang , Chia-Han Lai , Ren-Hau Yu , Ching-Yao Sun , Yu-Sheng Wang
- Applicant: Taiwan Semiconductor Manufacturing CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L23/532 ; H01L21/768 ; H01L21/3205 ; H01L21/311 ; H01L21/285
Abstract:
In a method for manufacturing a semiconductor device, a dielectric layer is formed on a substrate, and a contact hole is formed from the dielectric layer to the substrate. A dielectric spacer liner is formed to cover a sidewall and a bottom of the contact hole. A portion of the dielectric spacer liner is removed to expose a portion of the substrate. A metal silicide layer is formed into the substrate through the contact hole.
Public/Granted literature
- US20160172303A1 Contact Critical Dimension Control Public/Granted day:2016-06-16
Information query
IPC分类:
