- Patent Title: Stress in trigate devices using complimentary gate fill materials
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Application No.: US14938812Application Date: 2015-11-11
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Publication No.: US09450092B2Publication Date: 2016-09-20
- Inventor: Titash Rakshit , Martin Giles , Ravi Pillarisetty , Jack T. Kavalieros
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/78 ; H01L21/8238 ; H01L29/66 ; H01L21/8234 ; H01L27/12
Abstract:
Embodiments relate to an improved tri-gate device having gate metal fills, providing compressive or tensile stress upon at least a portion of the tri-gate transistor, thereby increasing the carrier mobility and operating frequency. Embodiments also contemplate method for use of the improved tri-gate device.
Public/Granted literature
- US20160064562A1 STRESS IN TRIGATE DEVICES USING COMPLIMENTARY GATE FILL MATERIALS Public/Granted day:2016-03-03
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