Provided is a method of manufacturing a nanowire, including: forming a plurality of grid patterns on a grid base layer; forming a sacrificial layer on the grid base layer on which the grid patterns are formed; producing a nanowire grid structure by forming a nanowire base layer on the sacrificial layer; forming a nanowire by wet etching the nanowire base layer; and separating the grid patterns from the nanowire by etching the sacrificial layer.