Invention Grant
- Patent Title: Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
- Patent Title (中): 在钨膜或氧化钨膜上形成氧化硅膜的成膜方法
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Application No.: US14796295Application Date: 2015-07-10
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Publication No.: US09460913B2Publication Date: 2016-10-04
- Inventor: Jun Sato , Pao-Hwa Chou
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP
- Agency: Cantor Colburn LLP
- Priority: JP2010-290565 20101227
- Main IPC: C23C16/00
- IPC: C23C16/00 ; H01L21/02 ; H01L21/285 ; C23C16/02 ; C23C16/40 ; C23C16/455
Abstract:
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, heating the object on which the tungsten film or the tungsten oxide film is formed, forming a seed layer on the tungsten film or the tungsten oxide film by supplying an aminosilane-based gas to a surface of the tungsten film or the tungsten oxide film, and forming a silicon oxide film on the seed layer by simultaneously supplying a silicon material gas including silicon and a gas including an oxidizing agent for oxidizing silicon.
Public/Granted literature
- US20150332917A1 FILM-FORMING METHOD FOR FORMING SILICON OXIDE FILM ON TUNGSTEN FILM OR TUNGSTEN OXIDE FILM Public/Granted day:2015-11-19
Information query
IPC分类:
