Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Invention Grant

US09472750B2 Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications 有权

Title translation: 用于在旋转传递转矩磁性随机存取存储器应用中的垂直磁结中提供底部被钉扎层的方法和系统

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Patent Title: Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications
Patent Title (中): 用于在旋转传递转矩磁性随机存取存储器应用中的垂直磁结中提供底部被钉扎层的方法和系统
Application No.: US14977145

Application Date: 2015-12-21
Publication No.: US09472750B2

Publication Date: 2016-10-18
Inventor: Xueti Tang , Dustin William Erickson , Jang-Eun Lee
Applicant: Samsung Electronics Co., LTD.
Applicant Address: KR Gyeonggi-Do
Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
Current Assignee Address: KR Gyeonggi-Do
Agency: Convergent Law Group LLP
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L21/8244 ; H01L43/08 ; H01L43/12 ; H01L43/02 ; G11C11/16 ; H01L43/10 ; H01L27/22

Method and system for providing a bottom pinned layer in a perpendicular magnetic junction usable in spin transfer torque magnetic random access memory applications

Abstract:

A magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes free and pinned layers separated by a nonmagnetic spacer layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The pinned layer has a perpendicular magnetic anisotropy (PMA) energy greater than its out-of-plane demagnetization energy. Providing the pinned layer includes providing a bulk PMA (B-PMA) layer, providing an interfacial PMA (I-PMA) layer on the B-PMA layer and then providing a sacrificial layer that is a sink for a constituent of the first I-PMA layer. An anneal is then performed. The sacrificial layer and part of the first I-PMA layer are removed after the anneal. Additional I-PMA layer(s) are provided after the removing. A remaining part of the first I-PMA layer and the additional I-PMA layer(s) have a thickness of not more than twenty Angstroms.

Abstract(Chinese):

描述了用于提供磁结的磁结和方法。磁结包括由非磁性间隔层隔开的自由和固定层。当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。钉扎层具有大于其平面外退磁能的垂直磁各向异性（PMA）能量。提供被钉扎层包括提供大块PMA（B-PMA）层，在B-PMA层上提供界面PMA（I-PMA）层，然后提供牺牲层，其为第一I- PMA层。然后进行退火。在退火之后去除牺牲层和第一I-PMA层的一部分。在除去后提供额外的I-PMA层。第一I-PMA层和附加的I-PMA层的剩余部分的厚度不超过二十埃。

Public/Granted literature

US20160197267A1 METHOD AND SYSTEM FOR PROVIDING A BOTTOM PINNED LAYER IN A PERPENDICULAR MAGNETIC JUNCTION USABLE IN SPIN TRANSFER TORQUE MAGNETIC RANDOM ACCESS MEMORY APPLICATIONS Public/Granted day:2016-07-07

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺