Invention Grant
- Patent Title: Optically tuned hardmask for multi-patterning applications
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Application No.: US14878514Application Date: 2015-10-08
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Publication No.: US09478421B2Publication Date: 2016-10-25
- Inventor: Christopher Dennis Bencher , Daniel Lee Diehl , Huixiong Dai , Yong Cao , Tingjun Xu , Weimin Zeng , Peng Xie
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: APPLIED MATERIALS, INC.
- Current Assignee: APPLIED MATERIALS, INC.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; H01L21/027 ; H01L21/3105 ; H01L21/311 ; C23C14/00 ; C23C14/06 ; C23C14/14 ; C23C14/35 ; H01L21/308

Abstract:
The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.
Public/Granted literature
- US20160042951A1 OPTICALLY TUNED HARDMASK FOR MULTI-PATTERNING APPLICATIONS Public/Granted day:2016-02-11
Information query
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