Invention Grant
US09478538B1 Methods for forming transistor devices with different threshold voltages and the resulting devices
有权
用于形成具有不同阈值电压的晶体管器件的方法以及所得到的器件
- Patent Title: Methods for forming transistor devices with different threshold voltages and the resulting devices
- Patent Title (中): 用于形成具有不同阈值电压的晶体管器件的方法以及所得到的器件
-
Application No.: US14820661Application Date: 2015-08-07
-
Publication No.: US09478538B1Publication Date: 2016-10-25
- Inventor: Hoon Kim , Ruilong Xie , Min Gyu Sung , Chanro Park
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L29/51 ; H01L29/423 ; H01L21/283
Abstract:
A method includes forming first and second gate cavities so as to expose first and second portions of a semiconductor material. A gate insulation layer is formed in the first and second gate cavities. A first work function material layer is formed in the first gate cavity. A second work function material layer is formed in the second gate cavity. A first barrier layer is selectively formed above the first work function material layer and the gate insulation layer in the first gate cavity. A second barrier layer is formed above the first barrier layer in the first gate cavity and above the second work function material layer and the gate insulation layer in the second gate cavity. A conductive material is formed above the second barrier layer in the first and second gate cavities in the presence of a treatment species to define first and second gate electrode structures.
Information query
IPC分类:
