Invention Grant
- Patent Title: Magnetic tunnel junctions
- Patent Title (中): 磁隧道结
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Application No.: US14746421Application Date: 2015-06-22
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Publication No.: US09478735B1Publication Date: 2016-10-25
- Inventor: Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John P.S.
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/00 ; H01L43/10 ; H01L43/02

Abstract:
Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.
Information query
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