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公开(公告)号：US09960346B2
公开(公告)日：2018-05-01
申请号：US14706182
申请日：2015-05-07
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy , Witold Kula
IPC: H01L43/08
CPC classification number: H01L43/08
Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.
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公开(公告)号：US20160329486A1
公开(公告)日：2016-11-10
申请号：US14706182
申请日：2015-05-07
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy , Witold Kula
IPC: H01L43/02
CPC classification number: H01L43/08
Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.
Abstract translation: 磁性隧道结具有包括磁记录材料的导电第一磁极。 导电的第二磁电极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第一电极的磁记录材料包括第一磁性区域，与第一磁性区域间隔开的第二磁性区域和与第一和第二磁性区域间隔开的第三磁性区域。 第一非磁性绝缘体金属氧化物包含区域在第一和第二磁性区域之间。 第二非磁性绝缘体金属氧化物包含区域在第二和第三磁性区域之间。 公开了其他实施例。
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公开(公告)号：US20170018705A1
公开(公告)日：2017-01-19
申请号：US14797622
申请日：2015-07-13
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy
CPC classification number: H01L43/10 , G11C11/161 , H01L43/02 , H01L43/08
Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.
Abstract translation: 一些实施例包括磁隧道结，其包括在多层堆叠和偏振器区域之间具有含铱区域的磁性参考材料。 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁电极，与第一电极间隔开并且包含磁性参考材料的导电第二磁极和在第一和第二电极之间的非磁性绝缘体材料。 第二电极的磁性参考材料包括含有与铂，钯和镍中的一种或多种交替的钴的堆叠的第一区域; 包括在所述第一区域上的含铱的第二区域; 并且在第二区域上包括含钴的第三区域。 第三区域直接抵靠非磁性绝缘体材料。
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公开(公告)号：US09537088B1
公开(公告)日：2017-01-03
申请号：US14797622
申请日：2015-07-13
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy
CPC classification number: H01L43/10 , G11C11/161 , H01L43/02 , H01L43/08
Abstract: Some embodiments include a magnetic tunnel junction comprising magnetic reference material having an iridium-containing region between a multi-layer stack and a polarizer region. Some embodiments include a magnetic tunnel junction having a conductive first magnetic electrode which contains magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and which contains magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic reference material of the second electrode includes a first region containing a stack of cobalt alternating with one or more of platinum, palladium and nickel; includes an iridium-containing second region over the first region; and includes a cobalt-containing third region over the second region. The third region is directly against the non-magnetic insulator material.
Abstract translation: 一些实施例包括磁隧道结，其包括在多层堆叠和偏振器区域之间具有含铱区域的磁性参考材料。 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁电极，与第一电极间隔开并且包含磁性参考材料的导电第二磁极和在第一和第二电极之间的非磁性绝缘体材料。 第二电极的磁性参考材料包括含有与铂，钯和镍中的一种或多种交替的钴的堆叠的第一区域; 包括在所述第一区域上的含铱的第二区域; 并且在第二区域上包括含钴的第三区域。 第三区域直接抵靠非磁性绝缘体材料。
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Patent Agency Ranking
公开(公告)号：US20150270480A1
公开(公告)日：2015-09-24
申请号：US14219748
申请日：2014-03-19
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy
Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.
Abstract translation: 旋转转矩传递存储器单元及其形成方法在此描述。 作为示例，自旋扭矩传递存储单元可以包括自对准偏振器，钉扎偏振器和形成在自对准偏振器和被钉入偏振器之间的存储材料。
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公开(公告)号：US09478735B1
公开(公告)日：2016-10-25
申请号：US14746421
申请日：2015-06-22
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
Abstract: Some embodiments include a magnetic tunnel junction which has a conductive first magnetic electrode containing magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and containing magnetic reference material, and a non-magnetic insulator material between the first and second electrodes. The magnetic recording material of the first electrode includes a set having an iridium-containing region between a pair of non-iridium-containing regions. In some embodiments, the non-iridium-containing regions are cobalt-containing regions.
Abstract translation: 一些实施例包括磁性隧道结，其具有包含磁记录材料的导电第一磁性电极，与第一电极间隔开并包含磁性参考材料的导电第二磁性电极以及第一和第二电极之间的非磁性绝缘体材料。 第一电极的磁记录材料包括在一对非含铱区域之间具有含铱区域的组。 在一些实施方案中，非含铱的区域是含钴区域。
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公开(公告)号：US09373779B1
公开(公告)日：2016-06-21
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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公开(公告)号：US20160163967A1
公开(公告)日：2016-06-09
申请号：US14563303
申请日：2014-12-08
Applicant: Micron Technology, Inc.
Inventor： Wei Chen , Witold Kula , Jonathan D. Harms , Sunil S. Murthy
CPC classification number: H01L43/10 , B82Y25/00 , G11B5/39 , G11B5/3909 , H01L27/11502 , H01L27/11507 , H01L27/222 , H01L43/08
Abstract: A magnetic tunnel junction includes a conductive first magnetic electrode that includes magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and includes magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic reference material of the second electrode includes a non-magnetic region comprising elemental iridium. The magnetic reference material includes a magnetic region comprising elemental cobalt or a cobalt-rich alloy between the non-magnetic region and the tunnel insulator material.
Abstract translation: 磁性隧道结包括包括磁记录材料的导电第一磁极。 导电的第二磁极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第二电极的磁性参考材料包括包含元素铱的非磁性区域。 磁性参考材料包括在非磁性区域和隧道绝缘体材料之间包含元素钴或富钴合金的磁性区域。
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公开(公告)号：US09344345B2
公开(公告)日：2016-05-17
申请号：US14219748
申请日：2014-03-19
Applicant: Micron Technology, Inc.
Inventor： Jonathan D. Harms , Wei Chen , Sunil S. Murthy
Abstract: Spin torque transfer memory cells and methods of forming the same are described herein. As an example, spin torque transfer memory cells may include a self-aligning polarizer, a pinned polarizer, and a storage material formed between the self-aligning polarizer and the pinned polarizer.
Abstract translation: 旋转转矩传递存储器单元及其形成方法在此描述。 作为示例，自旋扭矩传递存储单元可以包括自对准偏振器，钉扎偏振器和形成在自对准偏振器和被钉入偏振器之间的存储材料。
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