Invention Grant
US09489989B2 Voltage regulators, memory circuits, and operating methods thereof
有权
电压调节器，存储器电路及其操作方法
- Patent Title: Voltage regulators, memory circuits, and operating methods thereof
- Patent Title (中): 电压调节器，存储器电路及其操作方法
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Application No.: US12820712Application Date: 2010-06-22
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Publication No.: US09489989B2Publication Date: 2016-11-08
- Inventor: Ming-Chieh Huang , Chan-Hong Chern , Tien Chun Yang , Chih-Chang Lin , Yuwen Swei
- Applicant: Ming-Chieh Huang , Chan-Hong Chern , Tien Chun Yang , Chih-Chang Lin , Yuwen Swei
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW
- Agency: Lowe Hauptman & Ham, LLP
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G11C11/24 ; G11C7/06 ; G11C5/14 ; G11C8/00
Abstract:
A voltage regulator includes an output stage electrically coupled with an output end of the voltage regulator. The output stage includes at least one transistor having a bulk and a drain. At least one back-bias circuit is electrically coupled with the bulk of the at least one transistor. The at least one back-bias circuit is configured to provide a bulk voltage, such that the bulk and the drain of the at least one transistor are reverse biased during a standby mode of a memory array that is electrically coupled with the voltage regulator.
Public/Granted literature
- US20110310690A1 VOLTAGE REGULATORS, MEMORY CIRCUITS, AND OPERATING METHODS THEREOF Public/Granted day:2011-12-22
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