Invention Grant
- Patent Title: Method for fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13161591Application Date: 2011-06-16
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Publication No.: US09490342B2Publication Date: 2016-11-08
- Inventor: Chien-Ming Lai , Yi-Wen Chen , Zhi-Cheng Lee , Tong-Jyun Huang , Che-Hua Hsu , Kun-Hsien Lin , Tzung-Ying Lee , Chi-Mao Hsu , Hsin-Fu Huang , Chin-Fu Lin
- Applicant: Chien-Ming Lai , Yi-Wen Chen , Zhi-Cheng Lee , Tong-Jyun Huang , Che-Hua Hsu , Kun-Hsien Lin , Tzung-Ying Lee , Chi-Mao Hsu , Hsin-Fu Huang , Chin-Fu Lin
- Applicant Address: TW HSINCHU
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW HSINCHU
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L29/66 ; H01L21/8238 ; H01L21/28 ; H01L21/3213 ; H01L29/423 ; H01L29/49 ; H01L29/51 ; H01L29/78
Abstract:
A method for fabricating a semiconductor device includes the following steps. Firstly, a dummy gate structure having a dummy gate electrode layer is provided. Then, the dummy gate electrode layer is removed to form an opening in the dummy gate structure, thereby exposing an underlying layer beneath the dummy gate electrode layer. Then, an ammonium hydroxide treatment process is performed to treat the dummy gate structure. Afterwards, a metal material is filled into the opening.
Public/Granted literature
- US20120322218A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2012-12-20
Information query
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