Invention Grant
US09502641B2 Double synthetic antiferromagnet using rare earth metals and transition metals
有权
使用稀土金属和过渡金属的双合成反铁磁体
- Patent Title: Double synthetic antiferromagnet using rare earth metals and transition metals
- Patent Title (中): 使用稀土金属和过渡金属的双合成反铁磁体
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Application No.: US15054721Application Date: 2016-02-26
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Publication No.: US09502641B2Publication Date: 2016-11-22
- Inventor: Guohan Hu , Daniel C. Worledge
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L43/12
- IPC: H01L43/12 ; H01L43/08 ; H01L43/02 ; G11C11/16 ; H01L43/10
Abstract:
A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element.
Public/Granted literature
- US20160190436A1 DOUBLE SYNTHETIC ANTIFERROMAGNET USING RARE EARTH METALS AND TRANSITION METALS Public/Granted day:2016-06-30
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