发明授权
- 专利标题: Adjustment of write timing in a memory device
- 专利标题(中): 调整存储设备中的写入时序
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申请号: US14243283申请日: 2014-04-02
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公开(公告)号: US09508408B2公开(公告)日: 2016-11-29
- 发明人: Ming-Ju Edward Lee , Shadi M. Barakat , Warren Fritz Kruger , Xiaoling Xu , Toan Duc Pham , Aaron John Nygren
- 申请人: Advanced Micro Devices, Inc.
- 申请人地址: US CA Sunnyvale
- 专利权人: ADVANCED MICRO DEVICES, INC.
- 当前专利权人: ADVANCED MICRO DEVICES, INC.
- 当前专利权人地址: US CA Sunnyvale
- 代理机构: Volpe and Koenig, P.C.
- 主分类号: G11C7/00
- IPC分类号: G11C7/00 ; G11C7/22 ; G06F13/16 ; G06F13/42 ; G11C11/4076
摘要:
A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.
公开/授权文献
- US20140211571A1 Adjustment of Write Timing in a Memory Device 公开/授权日:2014-07-31
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