Invention Grant
- Patent Title: Method and system for providing rare earth magnetic junctions usable in spin transfer torque magnetic random access memory applications
- Patent Title (中): 提供可用于旋转转矩磁性随机存取存储器应用中的稀土磁结的方法和系统
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Application No.: US14731267Application Date: 2015-06-04
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Publication No.: US09508924B2Publication Date: 2016-11-29
- Inventor: Xueti Tang , Jangeun Lee
- Applicant: Samsung Electronics Co., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Convergent Law Group LLP
- Main IPC: H01L43/00
- IPC: H01L43/00 ; G11C11/16 ; H01L43/10 ; H01L43/12 ; H01L43/08

Abstract:
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a pinned layer and nonmagnetic spacer layer between the free and pinned layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free and pinned layers each has a layer perpendicular magnetic anisotropy energy greater than an out-of-plane demagnetization energy. At least one of the pinned layer and the free layer includes a multilayer. The multilayer includes at least one bilayer. Each of the bilayer(s) has a first layer and a second layer. The first layer includes an alloy of a magnetic transition metal and a rare earth. The second layer includes an amorphous magnetic layer. The multilayer has a nonzero perpendicular magnetic anisotropy up to at least four hundred degrees Celsius.
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