Invention Grant
US09514958B2 Etching method of semiconductor substrate, and method of producing semiconductor device
有权
半导体衬底的蚀刻方法以及半导体器件的制造方法
- Patent Title: Etching method of semiconductor substrate, and method of producing semiconductor device
- Patent Title (中): 半导体衬底的蚀刻方法以及半导体器件的制造方法
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Application No.: US14722811Application Date: 2015-05-27
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Publication No.: US09514958B2Publication Date: 2016-12-06
- Inventor: Yoshinori Nishiwaki , Tetsuya Kamimura , Tadashi Inaba , Atsushi Mizutani
- Applicant: FUJIFILM Corporation
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2012-259788 20121128
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/3213 ; C09K13/00 ; H01L21/033 ; H01L21/02 ; H01L21/311
Abstract:
An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.
Public/Granted literature
- US20150255309A1 ETCHING METHOD OF SEMICONDUCTOR SUBSTRATE, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2015-09-10
Information query
IPC分类:
