公开(公告)号：US12235584B2

公开(公告)日：2025-02-25

申请号：US17219805

申请日：2021-03-31

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: G03F7/32 ,  B65D1/02 ,  G03F7/42

Abstract: The present invention provides a chemical liquid which makes it possible to obtain a resist pattern while inhibiting pattern interval variation in a case where the chemical liquid is used as a developer or rinsing solution. The present invention also provides a chemical liquid storage body, a resist pattern forming method, and a semiconductor chip manufacturing method. The chemical liquid according to an embodiment of the present invention is a chemical liquid containing n-butyl acetate and isobutyl acetate, in which a content of the n-butyl acetate is 99.000% to 99.999% by mass with respect to a total mass of the chemical liquid, and a content of the isobutyl acetate is 1.0 to 1,000 mass ppm with respect to the total mass of the chemical liquid.

公开(公告)号：US20240246853A1

公开(公告)日：2024-07-25

申请号：US18627780

申请日：2024-04-05

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Masahiro Yoshidome ,  Yukihisa Kawada

IPC: C03C17/245 ,  B65D23/02 ,  C03C17/00 ,  C09G1/00 ,  G03F7/004 ,  H01L21/027

CPC classification number: C03C17/245 ,  B65D23/02 ,  C03C17/004 ,  C09G1/00 ,  G03F7/0048 ,  C03C2218/152 ,  H01L21/0274

Abstract: The chemical liquid storage includes a container and a chemical liquid, wherein the chemical liquid contains at least one of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

公开(公告)号：US12012658B2

公开(公告)日：2024-06-18

申请号：US17565419

申请日：2021-12-29

Applicant: FUJIFILM Corporation

Inventor： Atsushi Mizutani ,  Tetsuya Kamimura

IPC: C23F1/16 ,  H01L21/3213

CPC classification number: C23F1/16 ,  H01L21/32134

Abstract: An object of the present invention is to provide a composition that exhibits excellent dissolving ability and etching selectivity (particularly, etching selectivity for a Ru-containing substance and other metal-containing substances) to metal-containing substances (particularly, a Ru-containing substance), a kit for preparing the composition, and a method for treating a substrate by using the composition.
The composition according to an embodiment of the present invention is a composition for removing metal-containing substances, and contains one or more periodic acid compounds selected from the group consisting of a periodic acid and a salt thereof, an azole compound, and an alkali compound.

公开(公告)号：US12006446B2

公开(公告)日：2024-06-11

申请号：US17547176

申请日：2021-12-09

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura

IPC: C09G1/02 ,  H01L21/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/02074 ,  H01L21/3212

Abstract: The present invention provides a polishing liquid which has a good polishing speed and reduces the occurrence of dishing on a surface to be polished of an object to be polished having a cobalt-containing film after polishing in a case where the polishing liquid is applied to CMP of the object to be polished, and makes it possible to manufacture a semiconductor product having excellent reliability. The present invention also provides a chemical mechanical polishing method using the polishing liquid. The polishing liquid of an embodiment of the present invention is a polishing liquid used for chemical mechanical polishing of an object to be polished having a cobalt-containing film, the polishing liquid including colloidal silica, one or more specific compounds selected from the group consisting of glycine, alanine, sarcosine, and iminodiacetic acid, a passivation film forming agent, hydrogen peroxide, sodium, and ammonia, in which a mass ratio of a content of ammonia to a content of sodium is 1×103 to 1×106, and a pH is 5.5 to 8.0.

公开(公告)号：US11976001B2

公开(公告)日：2024-05-07

申请号：US16787197

申请日：2020-02-11

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Masahiro Yoshidome ,  Yukihisa Kawada

IPC: B65D23/02 ,  C03C17/00 ,  C03C17/245 ,  C09G1/00 ,  G03F7/004 ,  H01L21/027

CPC classification number: C03C17/245 ,  B65D23/02 ,  C03C17/004 ,  C09G1/00 ,  G03F7/0048 ,  C03C2218/152 ,  H01L21/0274

Abstract: An object of the present invention is to provide a chemical liquid storage body which hardly causes short and defects in a formed wiring board in a case where a chemical liquid stored in the chemical liquid storage body is used in a wiring forming process including photolithography after the chemical liquid storage body is preserved for a certain period of time. The chemical liquid storage body according to an embodiment of the present invention includes a container and a chemical liquid stored in the container, in which the chemical liquid contains at least one kind of specific metal component selected from the group consisting of Fe, Al, Cr, and Ni, a content of the specific metal component in the chemical liquid with respect to a total mass of the chemical liquid is equal to or smaller than 100 mass ppt, at least a portion of a liquid contact portion of the container is formed of glass containing sodium atoms, and provided that B represents a content of sodium atoms in a bulk region with respect to a total mass of the bulk region, and A represents a content of sodium atoms in a surface region with respect to a total mass of the surface region, a content mass ratio of A to B represented by A/B is higher than 0.10 and less than 1.0 in at least a portion of the liquid contact portion.

公开(公告)号：US20240018442A1

公开(公告)日：2024-01-18

申请号：US18473501

申请日：2023-09-25

Applicant: FUJIFILM Corporation

Inventor： Naoko OUCHI ,  Tetsuya Kamimura ,  Shimpei Yamada ,  Naotsugu Muro

IPC: C11D1/62 ,  C11D11/00 ,  C11D3/00 ,  C11D3/28 ,  C11D3/30 ,  C11D3/20 ,  H01L21/02

CPC classification number: C11D1/62 ,  C11D11/0047 ,  C11D3/0073 ,  C11D3/28 ,  C11D3/30 ,  C11D3/2082 ,  C11D3/2086 ,  H01L21/02074

Abstract: An object of the present invention is to provide a cleaning liquid for a semiconductor substrate, which is excellent in cleaning performance of organic impurities, and a cleaning method for a semiconductor substrate. The cleaning liquid for a semiconductor substrate according to the present invention is a cleaning liquid for a semiconductor substrate used for cleaning a semiconductor substrate, and includes a compound represented by Formula (A).

公开(公告)号：US11267989B2

公开(公告)日：2022-03-08

申请号：US16984270

申请日：2020-08-04

Applicant: FUJIFILM CORPORATION

Inventor： Tetsuya Kamimura

IPC: C09G1/02 ,  C08K3/36 ,  C08K5/09 ,  C08K5/3442 ,  C08K5/3467 ,  C08K5/41 ,  C08K5/51 ,  C09K3/14 ,  H01L21/306

Abstract: A polishing liquid used for chemical mechanical polishing includes colloidal silica, in which a zeta potential of the colloidal silica measured in a state where the colloidal silica is present in the polishing liquid is −20 mV or less, an electrical conductivity is 200 μS/cm or less, a pH is 2 to 6, and a transmittance is 70% to 99%.

公开(公告)号：US10927327B2

公开(公告)日：2021-02-23

申请号：US16272516

申请日：2019-02-11

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Tomonori Takahashi

IPC: C11D7/32 ,  H01L21/304 ,  C11D3/20 ,  C11D3/30 ,  C11D3/04 ,  C11D7/34 ,  C11D7/36 ,  C11D7/06 ,  C11D7/10 ,  C11D7/26 ,  C11D7/50 ,  C11D11/00

Abstract: An object of the present invention is to provide a treatment liquid for a semiconductor device, which has excellent temporal stability of residue removing performance, and excellent anticorrosion performance for a treatment target. In addition, another object of the present invention is to provide a method for washing a substrate and a method for manufacturing a semiconductor device, each using the treatment liquid.
The treatment liquid of an embodiment of the present invention is a treatment liquid for a semiconductor device, including at least one hydroxylamine compound selected from the group consisting of hydroxylamine and a hydroxylamine salt, at least one basic compound selected from the group consisting of an amine compound other than the hydroxylamine compound and a quaternary ammonium hydroxide salt, and at least one selected from the group consisting of a reducing agent other than the hydroxylamine compound and a chelating agent, and having a pH of 10 or more.

公开(公告)号：US10578966B2

公开(公告)日：2020-03-03

申请号：US15271302

申请日：2016-09-21

Applicant: FUJIFILM Corporation

Inventor： Hirotaka Takishita ,  Tetsuya Kamimura ,  Takuya Tsuruta ,  Kyouhei Arayama ,  Kazuto Shimada ,  Masahiro Mori

IPC: G03F7/00 ,  G03F7/004 ,  C09B57/00 ,  G02B5/20 ,  G02B5/22 ,  C09B67/46 ,  G03F7/031 ,  G03F7/032 ,  G03F7/033 ,  G03F7/038 ,  G03F7/16 ,  G03F7/20 ,  G03F7/26 ,  H04N5/33 ,  C09B23/01 ,  C09B23/04 ,  G03F7/027 ,  G03F7/105 ,  H01L27/146

Abstract: A coloring composition includes colorants and a resin, in which a ratio A/B of a minimum value A of an absorbance in a wavelength range of 400 to 830 nm to a maximum value B of an absorbance in a wavelength range of 1000 to 1300 nm is 4.5 or higher.

公开(公告)号：US12161973B2

公开(公告)日：2024-12-10

申请号：US18477662

申请日：2023-09-29

Applicant: FUJIFILM Corporation

Inventor： Tetsuya Kamimura ,  Satomi Takahashi ,  Tadashi Omatsu ,  Tetsuya Shimizu

IPC: B01D67/00 ,  B01D3/14 ,  B01D61/58 ,  B01D65/02 ,  B01D69/02 ,  B01D71/26 ,  B01D71/28 ,  B01D71/32 ,  B01D71/56 ,  B01D71/68 ,  H01L21/67

Abstract: A filtering device is used for obtaining a chemical liquid by purifying a liquid to be purified and includes an inlet portion, an outlet portion, a filter A, at least one filter B different from the filter A, and a flow path that includes the filter A and the filter B arranged in series and extends from the inlet portion to the outlet portion. The filter A has a porous membrane made of ultra-high-molecular-weight polyethylene and a resin layer disposed to cover at least a portion of the surface of the porous membrane, and the resin layer includes a resin having a neutral group or an ion exchange group.