发明授权
US09514958B2 Etching method of semiconductor substrate, and method of producing semiconductor device 有权
半导体衬底的蚀刻方法以及半导体器件的制造方法

Etching method of semiconductor substrate, and method of producing semiconductor device
摘要:
An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.
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