发明授权
US09514958B2 Etching method of semiconductor substrate, and method of producing semiconductor device
有权
半导体衬底的蚀刻方法以及半导体器件的制造方法
- 专利标题: Etching method of semiconductor substrate, and method of producing semiconductor device
- 专利标题(中): 半导体衬底的蚀刻方法以及半导体器件的制造方法
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申请号: US14722811申请日: 2015-05-27
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公开(公告)号: US09514958B2公开(公告)日: 2016-12-06
- 发明人: Yoshinori Nishiwaki , Tetsuya Kamimura , Tadashi Inaba , Atsushi Mizutani
- 申请人: FUJIFILM Corporation
- 申请人地址: JP Tokyo
- 专利权人: FUJIFILM Corporation
- 当前专利权人: FUJIFILM Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sughrue Mion, PLLC
- 优先权: JP2012-259788 20121128
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/3213 ; C09K13/00 ; H01L21/033 ; H01L21/02 ; H01L21/311
摘要:
An etching method containing the step of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a transition metal by bringing an etching liquid into contact with the substrate and thereby removing the first layer, wherein the first layer has a surface oxygen content from 0.1 to 10% by mole, and wherein the etching liquid comprises an ammonia compound and an oxidizing agent, and has a pH of from 7 to 14.
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