A capacitor and method of forming a capacitor are presented. The capacitor includes a substrate having a capacitor region in which the capacitor is disposed. The capacitor includes first, second and third sub-capacitors (C1, C2 and C3). The C1 comprises a metal oxide semiconductor (MOS) capacitor which includes a gate on the substrate. The gate includes a gate electrode over a gate dielectric. A first C1 plate is served by the gate electrode, a second C1 plate is served by the substrate of the capacitor region and a C1 capacitor dielectric is served by the gate dielectric. The C2 includes a back-end-of-line (BEOL) vertical capacitor disposed in ILD layers with metal levels and via levels. A plurality of metal lines are disposed in the metal levels. The metal lines of a metal level are grouped in alternating first and second groups, the first group serves as first C2 plates and second group serves as second C2 plates and the dielectric layers between the first and second groups serve as C2 capacitor dielectrics. The C3 includes a first C3 plate served by the gate electrode, a second C3 plate served by second group lines in the first metal level of the ILD layers, and a C3 capacitor dielectric is served by the first via level dielectric below M1 and above the gate electrode. A first capacitor terminal is coupled to first capacitor plates of C1, C2 and C3 and a second capacitor terminal is coupled to second capacitor plates of C1, C2 and C3.