Invention Grant
US09525076B2 Memory device using graphene as charge-trap layer and method of operating the same
有权
使用石墨烯作为电荷陷阱层的存储器件及其操作方法
- Patent Title: Memory device using graphene as charge-trap layer and method of operating the same
- Patent Title (中): 使用石墨烯作为电荷陷阱层的存储器件及其操作方法
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Application No.: US13960256Application Date: 2013-08-06
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Publication No.: US09525076B2Publication Date: 2016-12-20
- Inventor: Jae-ho Lee , Hyun-jong Chung , Seong-jun Park , Kyung-eun Byun , David Seo , Hyun-jae Song , Jin-seong Heo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Priority: KR10-2013-0016595 20130215
- Main IPC: H01L29/792
- IPC: H01L29/792 ; B82Y10/00 ; H01L21/28 ; H01L29/47 ; H01L29/788 ; H01L29/16 ; G11C11/40 ; H01L29/778 ; G11C16/04 ; H01L51/05
Abstract:
A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.
Public/Granted literature
- US20140231820A1 MEMORY DEVICE USING GRAPHENE AS CHARGE-TRAP LAYER AND METHOD OF OPERATING THE SAME Public/Granted day:2014-08-21
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