Invention Grant
US09530922B2 Overvoltage protection components in an optoelectronic circuit on SOI
有权
SOI上的光电子电路中的过压保护元件
- Patent Title: Overvoltage protection components in an optoelectronic circuit on SOI
- Patent Title (中): SOI上的光电子电路中的过压保护元件
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Application No.: US14496192Application Date: 2014-09-25
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Publication No.: US09530922B2Publication Date: 2016-12-27
- Inventor: Pascal Fonteneau
- Applicant: STMICROELECTRONICS SA
- Applicant Address: FR Montrouge
- Assignee: STMICROELECTRONICS SA
- Current Assignee: STMICROELECTRONICS SA
- Current Assignee Address: FR Montrouge
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Priority: FR1359287 20130926
- Main IPC: H01L31/111
- IPC: H01L31/111 ; H01L31/0232 ; H01L31/18 ; H01L31/11 ; H01L31/02 ; H01L27/12 ; H01L31/028 ; H01L31/105
Abstract:
An overvoltage protection component may be in a SOI layer, a portion of the SOI layer forming the core of an optical waveguide. This component may be made of semiconductor regions of different doping types and/or levels, at least one of these regions corresponding to at least a portion of the waveguide core.
Public/Granted literature
- US20150084092A1 OVERVOLTAGE PROTECTION COMPONENTS IN AN OPTOELECTRONIC CIRCUIT ON SOI Public/Granted day:2015-03-26
Information query
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