发明授权
- 专利标题: Photoelectric conversion device and manufacturing method thereof
- 专利标题(中): 光电转换装置及其制造方法
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申请号: US13087714申请日: 2011-04-15
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公开(公告)号: US09537043B2公开(公告)日: 2017-01-03
- 发明人: Shunpei Yamazaki , Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru
- 申请人: Shunpei Yamazaki , Hajime Kimura , Yoshiaki Ito , Takuro Ohmaru
- 申请人地址: JP Kanagawa-ken
- 专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office
- 代理商 Eric J. Robinson
- 优先权: JP2010-100337 20100423
- 主分类号: H01L31/0203
- IPC分类号: H01L31/0203 ; H01L31/20 ; C23C14/08 ; C23C14/34 ; H01L31/0296 ; H01L31/0304 ; H01L31/0312 ; H01L31/0368 ; H01L31/0376 ; H01L31/0392 ; H01L31/075 ; H01L31/18 ; H02S40/32 ; H01L21/02
摘要:
It is an object to reduce the region of a photoelectric conversion element which light does not reach, to suppress deterioration of power generation efficiency, and to suppress manufacturing cost of a voltage conversion element. The present invention relates to a transmissive photoelectric conversion device which includes a photoelectric conversion element including an n-type semiconductor layer, an intrinsic semiconductor layer, and a p-type semiconductor layer; a voltage conversion element which is overlapped with the photoelectric conversion element and which includes an oxide semiconductor film for a channel formation region; and a conductive element which electrically connects the photoelectric conversion element and the voltage conversion element. The photoelectric conversion element is a solar cell. The voltage conversion element includes a transistor having a channel formation region including an oxide semiconductor film. The voltage conversion element is a DC-DC converter.
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